Correlated electron-hole pairs, or excitons, in semiconductor nanostructures have been studied extensively over the past few decades. The optical response of excitons is complicated due to inhomogeneous broadening, presence of multiple states, and exciton-exciton interactions. In this work we bring new perspectives to exciton physics in semiconductor quantum wells (QWs) through two-dimensional coherent spectroscopy (2DCS).\nThe effect of QW growth direction on the optical properties of excitons is explored by studying (110)-oriented GaAs QWs. The homogeneous and inhomogeneous linewidths of the heavy-hole exciton resonance are measured. By probing the optical nonlinear response for polarization along the in-plane crystal axes [1-10] and [001], we measure different homogeneous linewidths for the two orthogonal directions. This difference is found to be due to anisotropic excitation-induced dephasing, caused by a crystal-axis-dependent absorption coefficient. The extrapolated zero-excitation density homogeneous linewidth exhibits an activation-like temperature dependence.\nSpectral diffusion of excitons in (001)-oriented QWs has been studied. We show that the spectral diffusion characteristics depend strongly on the sample temperature. Spectral diffusion is generally assumed to follow the strong-redistribution approximation, partly because of lack of any evidence to the contrary. We find that this assumption is violated at low sample temperatures for excitons in QWs; high-energy excitons preferentially relax due to a negligible phonon population at low temperatures. The frequency-frequency correlation function is measured through a numerical fitting procedure to quantify spectral diffusion for sample temperatures
>20 K.\nExciton-exciton interactions affect the light-matter interactions in QWs significantly. We present an intuitive and simple model for these interactions by treating excitons as interacting bosons. We show that the polarization-dependent exciton dephasing rate in GaAs quantum wells is due to the bosonic character of excitons. We fit slices from simulated spectra to those from the experimentally measured spectra and show that interference between two different quantum mechanical pathways results in a slower dephasing rate for co-circular and co-linear polarization of optical excitation pulses. This interference does not exist for cross-linearly polarized excitation pulses resulting in a faster dephasing rate. Additionally, we were able to separately quantify inter- and intra-mode interactions between excitons through exciton-density-dependent measurements.
This dissertation addresses both fundamental aspects of the coherent exciton kinetics in single semiconductor quantum wells and more application-oriented aspects of the collective excitonic optical properties in quantum well Bragg structures. We use a bosonic theory to investigate the ultrafast coherent exciton dynamics after an optical excitation in a single semiconductor quantum well. It is shown that, on intermediate time scales, nonlinear mean-field interactions between excitons lead to a coherent, wave-like evolution in the momentum distribution of optically inactive excitons, which can survive for some time before dephasing sets in. Driven by two-exciton correlations, this coherent quantum kinetic effect bridges the well-known kinetics associated with optical excitation on the one hand and incoherent relaxation on the other. We also study more general dynamical properties of bosonic mean field systems with N-species of excitons (in a single semiconductor quantum well). We find that the momentum-conserving exciton mean field equations, including the coupling to external fields and fermionic corrections, have the dynamical structure su(N,N). We show that one can define a non-real generalized "Bloch vector" and a non-hermitian "density matrix" description, which allow us to explicitly obtain all the constants of motion associated with the su(N,N) symmetry. The many-body effects and correlations of excitons in a single quantum well are mainly induced by the Coulomb interactions. In the case of a semiconductor quantum well Bragg structure, the light induced coupling between different quantum wells also dramatically affects the excitons' behavior, especially through the collective excitations of excitons in the whole structure. We investigate the linear excitonic optical properties of the quantum well Bragg structure induced by the collective excitations using the transfer matrix approach. We show that the so called "intermediate band" (IB) created by the exciton resonance, which does not exist in conventional photonic crystals, can be used for the stopping, storing and releasing of light, which is important in information processing devices. We also discuss the compensation of the dispersive distortion in the light delay process through reversing the IB band structure. Other conceptual and practical issues such as the decay rate of the IB modes and the generalized anti-reflection coating are also investigated.