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Step Angle Dependence of Tl2212 Josephson Junction Properties on MgO (100) Substrates

Seiichi Tokunaga, Masaaki Nemoto, Kazuhiro Shimaoka, Isao Yoshida

Published Jan 1, 1999• 0 citations
Publisher
DOI
10.1007/978-4-431-66874-9_279

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We have successfully fabricated ramp-type junctions on MgO substrates using an SrTiO/sub 3/ (STO) buffer layer. The observed I/sub c/R/sub n/ product for the junctions on MgO with STO buffer layer were about 2 mV at 4.2 K and 0.1 mV at 60 K. The junctions clearly showed Shapiro steps under irradiation of MM-waves and sub-MM-waves. We observed Josephson emission at 50 GHz from a junction on a MgO substrate with STO buffer layer at 17 K. We have also confirmed mixing in the self-oscillating mode using MM-wave and sub-MM-wave signals.
We have prepared high-Tc superconducting heterostructures for DC SQUIDs with graphoepitaxial step edge Josephson junctions on single crystal MgO substrates and investigated them using complementary characterization techniques, including atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy. Combined epitaxial (out-of-plane) and graphoepitaxial (in-plane) growth of YBa2Cu3O7-x (YBCO) films on the tilted surfaces of step edges on MgO substrates was observed. The high-Tc step-edge Josephson junctions demonstrated a good reproducibility and an IcRn product of about 600 μV at 77 K. The DC SQUIDs with step edge junctions showed voltage swings δVpp of up to about 60 μV at 77 K. High values of Rn of the graphoepitaxial step edge Josephson junctions can be advantageous for their applications as qubits.