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Quantum Electronics and Laser Science Conference

Transition to a multiphoton excitonic response in GaAs

A. C. Schaefer, N. H. Bonadeo, Duncan G. Steel

Published May 22, 1995• 0 citations
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We have investigated the polarization-dependent two-photon absorption in GaAs/AlGaAs quantum wires. The anisotropic selection rules of the multiphoton absorption process are exploited to study the one-dimensional 2p exciton states and the transitions between quantum wire subbands of different quantum numbers (\ensuremath{\Delta}ny{\mathit{n}}_{\mathit{y}}ny​\ensuremath{\ne}0 selection rule). The deviations from the selection rules derived for the strict one-dimensional case are discussed, and depend on the actual quasi-one-dimensional character of the excitonic wave functions.
Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.