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Nanotechnology

Tunable capacitive coupling between two semiconductor charge qubits

Guodong Yu, Hai-Ou Li, Gang Cao, Ming Xiao, H. W. Jiang, Guo‐Ping Guo

Published Jun 29, 2016• 10 citations
Publisher

Abstract

Strong coupling between two qubits is one of the main requirements for high fidelity two-qubit logic operations. Here we experimentally investigate the capacitive coupling between two double quantum dots. A pair of open slot confinement gates is used to enhance the coupling. We find that the coupling energy J can be conveniently tuned in a broad range. Through numerical simulations, we study the effect of J on two-qubit operations. The analysis shows that our experimentally obtained J is adequate to achieve high fidelity two-qubit entanglement and logic gates.

DOI
10.1088/0957-4484/27/32/324003

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Strong coupling between two qubits is one of the main requirements for high fidelity two-qubit logic operations. Here we experimentally investigate the capacitive coupling between two double quantum dots. A pair of open slot confinement gates is used to enhance the coupling. We find that the coupling energy J can be conveniently tuned in a broad range. Through numerical simulations, we study the effect of J on two-qubit operations. The analysis shows that our experimentally obtained J is adequate to achieve high fidelity two-qubit entanglement and logic gates.
Understanding the interactions that couple gate-defined quantum-dot qubits is an important step to using such devices in quantum computing. For double-quantum-dot qubits with an effective charge dipole moment, a capacitive dipole-dipole interaction can yield coherent coupling between neighboring qubits. Here researchers reveal the tunability of this capacitive-coupling energy with applied gate voltages in a quadruple-quantum-dot array, tuning the coupling energy from 15 to 32 GHz. Modeling the system as a network of charge nodes joined by capacitors, the authors demonstrate how the capacitive-coupling energy between pairs of double dots depends on the various capacitances in the network.
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.
We theoretically examine the capacitive coupling between two quantum dot hybrid qubits, each consisting of three electrons in a double quantum dot, as a function of the energy detuning of the double dot potentials. We show that a shaped detuning pulse can produce a two-qubit maximally entangling operation in $\ensuremath{\sim}50\phantom{\rule{0.28em}{0ex}}\mathrm{ns}$ without having to simultaneously change tunnel couplings. Simulations of the entangling operation in the presence of experimentally realistic charge noise yield two-qubit fidelities over 90%.
We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay of the interaction energy and simultaneous large detunings for both double dots gives rise to the ``double charge resonant'' regime, in which the unpolarized (1111) and fully polarized (0202) four-electron states in the absence of interqubit tunneling are near degeneracy, while being energetically well separated from the partially polarized (0211 and 1102) states. A rapid controlled-phase gate may be realized by combining time evolution in this regime in the presence of intraqubit tunneling and the interqubit Coulomb interaction with refocusing $\ensuremath{\pi}$ pulses that swap the singly occupied singlet and triplet states of the two qubits via, e.g., magnetic gradients. We calculate the fidelity of this entangling gate, incorporating models for two types of noise---charge fluctuations in the single-qubit detunings and charge relaxation within the low-energy subspace via electron-phonon interaction---and identify parameter regimes that optimize the fidelity. The rates of phonon-induced decay for pairs of GaAs or Si double quantum dots vary with the sizes of the dipolar and quadrupolar contributions and are several orders of magnitude smaller for Si, leading to high theoretical gate fidelities for coupled singlet-triplet qubits in Si dots. We also consider the dependence of the capacitive coupling on the relative orientation of the double dots and find that a linear geometry provides the fastest potential gate.
Universal multiple-qubit gates can be implemented by a set of universal single-qubit gates and any one kind of entangling two-qubit gate, such as a controlled-NOT gate. For semiconductor quantum dot qubits, two-qubit gate operations have so far only been demonstrated in individual electron spin-based quantum dot systems. Here we demonstrate the conditional rotation of two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 6 GHz have been realized. A truth table measurement for controlled-NOT operation shows comparable fidelities to that of spin-based two-qubit gates, although phase coherence is not explicitly measured. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.