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International Conference on Solid State Devices and Materials (SSDM)

Amorphous Semiconductor Optical Memory Devices

S. Asai, Eiichi Maruyama

Published Sep 21, 1970• 0 citations
Publisher
DOI
10.7567/ssdm.1970.5-4

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An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.