Raman cooling in a semiconductor

WILLIAM M. GOLDING

Galina A. Nemova

Stephen Colby Rand

Galina A. Nemova

Yin-Chung Chen, Gaurav Bahl

The laser cooling of vibrational states of solids has been achieved through photoluminescence in rare-earth elements, optical forces in optomechanics, and the Brillouin scattering light-sound interaction. The net cooling of solids through spontaneous Raman scattering, and laser refrigeration of indirect band gap semiconductors, both remain unsolved challenges. Here, we analytically show that photonic density of states (DoS) engineering can address the two fundamental requirements for achieving spontaneous Raman cooling: suppressing the dominance of Stokes (heating) transitions, and the enhancement of anti-Stokes (cooling) efficiency beyond the natural optical absorption of the material. We develop a general model for the DoS modification to spontaneous Raman scattering probabilities, and elucidate the necessary and minimum condition required for achieving net Raman cooling. With a suitably engineered DoS, we establish the enticing possibility of refrigeration of intrinsic silicon by annihilating phonons from all its Raman-active modes simultaneously, through a single telecom wavelength pump. This result points to a highly flexible approach for laser cooling of any transparent semiconductor, including indirect band gap semiconductors, far away from significant optical absorption, band-edge states, excitons, or atomic resonances.

Galina A. Nemova, Raman Kashyap

The recent achievements devoted to cooling of solids with a laser are presented in this paper. We discuss the latest results of traditional laser cooling of solids based on rare earth ions and new techniques based on colloidal lead-salt quantum dots doped in a glass host, laser cooling in Tm3+-doped oxy-fluoride glass ceramic. Relatively short (microsecond) lifetime of the excited level of the PbSe QDs compared to the millisecond lifetime of the excited level of RE ions allows an acceleration of the cooling process and provides an opportunity to use new materials with higher phonon energy as hosts, which are normally considered unsuitable for cooling with RE ions. Another new approach to the laser cooling problem based on super-radiance has been considered in this paper. The advantages of optical refrigeration with rare earth doped semiconductors, in which not only optically active electrons of the 4f shell but the valence and conduction bands of the host material are involved in cooling cycle is discussed. It is shown that involving the valence and conduction bands of the host in the cooling cycle allows the pump wavelength to be shorter than mean fluorescence wavelength. Raman laser cooling of solids as well as observation of spontaneous Brillouin cooling have been presented.