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International Conference on Solid State Devices and Materials (SSDM)

Fano-Kondo Effect in three quantum dots aiming at charge qubit measurement

Tetsufumi Tanamoto, Yoshifumi Nishi, Shinobu Fujita

Published Sep 18, 2007• 0 citations
Publisher
DOI
10.7567/ssdm.2007.i-9-3

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The Kondo effect and the Fano–Kondo effect are important phenomena that have been observed in quantum dots (QDs). We theoretically investigate the transport properties of a coupled QD system in order to study the possibility of detecting a qubit state from the modulation of the conductance peak in the Kondo effect and the dip in the Fano–Kondo effect. We show that the peak and dip of the conductance are both shifted depending on the qubit state. In particular, we find that we can estimate the optimal point and tunneling coupling between the |0> and |1> states of the qubit by measuring the shift of the positions of the conductance peak and dip, as functions of the applied gate voltage on the qubit and the distance between the qubit and the detector.