AIP conference proceedings
Random telegraphic voltage noise due to thermal bi-stability in a superconducting weak link
Sourav Biswas, Nikhil Kumar, Clemens B. Winkelmann, H. Courtois, Anjan Kumar Gupta
Abstract
We investigated the random telegraphic voltage noise signal in the hysteretic bi-stable state of a superconducting weak link device. Fluctuation induced random switching between zero voltage state and non-zero-voltage state gives rise to a random telegraphic voltage signal in time domain. This telegraphic noise is used to find the mean lifetime of each of the two states. The mean life time in the zero voltage state is found to decrease with increasing bias current while that of resistive state increases and thus the two cross at certain bias current. We qualitatively discuss this observed switching behavior as arising from the bi-stable nature.