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Bulletin of the American Physical Society

Progress towards Generating Rydberg State, One Electron Ions

Joan Dreiling, Shannon Fogwell Hoogerheide, Aung Naing, Joseph N. Tan

Published May 24, 2016• 0 citations
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One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

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Rydberg states in multiply charged ions

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Unknow•May 1, 1993•0 citations
Trapped ions are one of the leading platforms for quantum technologies due to their excellent control over their internal electronic and external motional degrees of freedom. Many techniques and interesting effects rely on the coupling of the ions to their motion, which makes precise control of them paramount. In this work, two novel techniques for motional state detection are presented. They allow the probing of certain motional states with a single measurement, without affecting the motion of the measured ion. These techniques are employed to generate and detect a highly entangled state between two motional modes in a novel manner. Furthermore, we harness the rich and intricate dynamics arising from the coupling of the ion's motion to its electronic degrees of freedom to study the emergence of interference. Theoretical predictions, describing interference both in the quantum and the classical regimes, are verified, offering a new and more intuitive description of interference, not just for trapped ions, but for a variety of systems that can be described in a similar way. On the other hand, Rydberg excitation with trapped ions enables new interaction mechanisms and makes them extremely sensitive to their surroundings. This thesis presents advances towards Rydberg experiments with longer ion strings and concludes with a first demonstration of coherent population transfer between Rydberg states in trapped ions. The methods developed significantly increase the toolbox for trapped Rydberg ions, enabling more sophisticated experiments, especially when multiple different Rydberg states are involved, and allow more flexibility when using longer ion strings.
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.