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Impurezas no lineales en cadenas unidimensionales Non-linear Impurities in One Dimensional Chains

L. F. Chaparro

Published Jan 1, 2013• 0 citations
OpenAlex

Abstract

One dimensional chains coupled to reservoirs prosent decoherence phenomena in electron transport. Impurities, which are randomly distributed over the chain, lead to the Anderson localization phenomenon, regardless of the degree of disorder. However, this effect c an be modified if the chain includes non-linear effects of impurities, leading to a self-trapping of the cha rge density. In this paper, we estimate the temporal dynamics of site-occupation probability as a function of the non-linear parameter that characterizes the impurity and the amplitude of hopping between adjacent sites. The excistence of a self-trapping phenomenon, which produce solitons, is demonstrated. The electron production depends on a critical exponent, which is a function of the dimensionality of the considered chain.

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One dimensional chains coupled to reservoirs prosent decoherence phenomena in electron transport. Impurities, which are randomly distributed over the chain, lead to the Anderson localization phenomenon, regardless of the degree of disorder. However, this effect c an be modified if the chain includes non-linear effects of impurities, leading to a self-trapping of the cha rge density. In this paper, we estimate the temporal dynamics of site-occupation probability as a function of the non-linear parameter that characterizes the impurity and the amplitude of hopping between adjacent sites. The excistence of a self-trapping phenomenon, which produce solitons, is demonstrated. The electron production depends on a critical exponent, which is a function of the dimensionality of the considered chain.
Anderson localization is a fundamental phenomenon in disordered quantum systems, where transport is suppressed by wave interference from extensive randomness. Moving beyond traditional multi-impurity scenarios, we investigate impurity-induced localization phenomena in low-dimensional tight-binding systems by focusing on the properties of impurity-generated bound states. By introducing a single on-site impurity into an otherwise extended lattice, we demonstrate that the impurity can host a bound state whose spatial character undergoes a transition from extended to localized as the impurity strength surpasses a critical value. This transition pertains solely to the impurity state, while the bulk states of the host system remain extended. We characterize the localization behavior by analyzing two distinct spatial profiles of the bound states: one with symmetric decay and another with exponential decay from the impurity site. Our results highlight how a local perturbation can induce nontrivial localization behavior at the level of individual eigenstates, without implying a global localization transition of the underlying electronic system.
A study is made of the survival probability P(t) for a quantum particle moving coherently on an ordered one-dimensional chain containing randomly placed irreversible traps in concentration q. We consider two separate models of the trapping process, focusing on the long-time limit of each. In the first model, intended to describe substitutional traps, the trapping impurities act as disruptive absorbing barriers which prevent further motion along the chain. For this model it is shown that -ln[P(t)]\ensuremath{\sim}t1/4{t}^{1/4}t1/4. The second model is intended to describe interstitial trapping impurities which do not disrupt the transport. It is argued for this case that Anderson localization of the quasiparticle wave functions will occur in the otherwise ordered chain as a result of the disorder introduced by the trapping impurities. In addition, it is suggested that the asymptotic decay of P(t) will be dominated by slowly decaying long-wavelength modes associated with asymptotically large segments of the chain which are free of traps. Our analysis predicts that the asymptotic decay will be of the same form as that which obtains in the substitutional model. Numerical results that we have performed support this prediction.
Single impurity Anderson model describes a system consisting of non-interacting conduction electrons coupled with a localized orbital having strongly interacting electrons at a particular site. This model has been proven successful to explain the phenomenon of metal-insulator transition through Anderson localization. Despite the well-understood behaviors of the model, little has been explored theoretically on how the model properties gradually evolve as functions of hybridization parameter, interaction energy, impurity concentration, and temperature. Here, we propose to do a theoretical study on those aspects of a single impurity Anderson model using the distributional exact diagonalization method. We solve the model Hamiltonian by randomly generating sampling distribution of some conducting electron energy levels with various number of occupying electrons. The resulting eigenvalues and eigenstates are then used to define the local single-particle Green function for each sampled electron energy distribution using Lehmann representation. Later, we extract the corresponding self-energy of each distribution, then average over all the distributions and construct the local Green function of the system to calculate the density of states. We repeat this procedure for various values of those controllable parameters, and discuss our results in connection with the criteria of the occurrence of metal-insulator transition in this system.
We study the ground-state phase diagram of the Anderson-Hubbard model with correlated hopping at half-filling in one dimension. The Hamiltonian has a local Coulomb repulsion UUU and a disorder potential with local energies randomly distributed in the interval $(\ensuremath{-}W,+W)$ with equal probability, acting on the singly occupied sites. The hopping process which modifies the number of doubly occupied sites is forbidden. The hopping between nearest-neighbor singly occupied and empty sites or between singly occupied and doubly occupied sites has the same amplitude ttt. We identify three different phases as functions of the disorder amplitude WWW and Coulomb interaction strength U>0U>0U>0. When U<4tU<4tU<4t the system shows a metallic phase: (i) only when no disorder is present W=0W=0W=0 or an Anderson-localized phase, (ii) when disorder is introduced $W\ensuremath{\ne}0$. When U>4tU>4tU>4t the Anderson-localized phase survives as long as disorder effects dominate on the interaction effects, otherwise a Mott-insulator phase (iii) arises. Phases (i) and (ii) are characterized by a finite density of doublons and a vanishing charge gap among the ground state and the excited states. Phase (iii) is characterized by the vanishing density of doublons and a finite gap for the charge excitations.
Anderson localization in a two-dimensional ultracold Bose-gas has been demonstrated experimentally. Atoms were released within a dumbbell-shaped optical trap, where the channel of variable aspect ratio provided the only path for particles to travel between source and drain reservoirs. This channel can be populated with columnar (repulsive) optical potential spikes of square cross section with arbitrary pattern. These spikes constitute impurities, the scattering centers for the otherwise free propagation of the particles. This geometry does not allow for classical potential trapping which can be hard to exclude in other experimental setups. Here we add further theoretical evidence for Anderson localization in this system by comparing the transport processes within a regular and a random pattern of impurities. It is demonstrated that the transport within randomly distributed impurities is suppressed and the corresponding localization length becomes shorter than the channel length. However, if an equal density of impurities are distributed in a regular manner, the transport is only modestly disturbed. This observation corroborates the conclusions of the experimental observation: the localization is indeed attributed to the disorder. Beyond analyzing the density distribution and the localization length, we also calculate a quantum ``impedance'' exhibiting qualitatively different behavior for regular and random impurity patterns.
In recent decades, one-dimensional (quasi-one-dimensional) Ising magnetic compounds have been synthesized, on which new promising materials are based. Here, percolation effects are considered in the model of a one-dimensional Ising magnet of finite nanometer size with boundary conditions “dangling ends”. The model takes into account the interaction with an external magnetic field, nearest-site interaction of nodes, interaction of second and third neighbors, as well as four-particle interactions. To model the phase transition, the Metropolis algorithm was used. Two options for the localization of a nonmagnetic impurity are considered: with mobile impurities and with fixed impurities (frozen impurities). For mobile impurities, the Metropolis algorithm contains the possibility of moving non-magnetic nodes along the chain. In the second variant, when the initial configurations are formed, nonmagnetic impurities in the magnet take random constant equiprobable positions. It is shown that the presence of non-magnetic nodes leads to a weakening of the correlation inside the chain and the magnet breaks up into several parts unconnected by magnetic interaction. The fraction of nonmagnetic atoms, in which the magnet is divided into two non-correlating parts, is an analogue to the percolation threshold in the percolation site problem. The percolation radius corresponds to the farthest nonzero interaction. The paper shows the existence of a relationship between the percolation threshold and the dependences of the relaxation time of the ferromagnet — antiferromagnet phase transition and the dynamic critical exponent Z on the fraction of nonmagnetic impurities in the model of a one-dimensional Ising magnet with fixed (frozen) nonmagnetic impurities. In the case of mobile nonmagnetic impurities, the absence of a clear connection between the percolation threshold and the dependences of the relaxation time and the dynamic critical exponent is shown.