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Mid-infrared absorption imaging of trapped paraexcitons in cuprous oxide

Kosuke Yoshioka, Makoto Kuwata‐Gonokami

Published Jan 1, 2014• 0 citations
Publisher

Abstract

Absorption imaging of trapped dark excitons in a bulk semiconductor is realized. 1s-2p transition in the mid-infrared is used to detect 1s paraexcitons. This technique is crucial to observe the Bose-Einstein condensate of excitons directly.
DOI
10.1364/cleo_qels.2014.fm3b.4

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