CONCEPT OF PHOTON STORAGE CAPACITY IN CELL BIOLOGY

Song Bian

The response of photonic memory effect in Ⅰ-Ⅴ characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon’s energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.

Mehmet Fatih Yanik, Shanhui Fan

Hans‐Joachim Lewerenz

George Karreman

James K. Thompson, Adam T. Black, Vladan Vuletić

Per‐Olov Löwdin