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Physical Review B

Chirped laser excitation of quantum dot excitons coupled to a phonon bath

A. Debnath, C. Meier, B. Chatel, Th. Amand

Published Oct 22, 2012• 56 citations
Publisher

Abstract

Motivated by recent experimental results, we present a detailed account of adiabatic population transfer in InGaAs/GaAs quantum dots by strong chirped laser pulses. Specifically, numerical simulations in very good agreement with experimental results allow for a clear physical picture of this process. An analytical expression is developed, which is used to analyze the strong-field adiabatic population transfer in the presence of the phonon environment. Optimal pulse parameters to achieve robust population transfer at temperatures as high as 80 K are identified and are confirmed by numerical simulations.

DOI
10.1103/physrevb.86.161304

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In the present study, we apply shortcut to adiabaticity pulses (time-dependent Rabi frequency and detuning) for the efficient population transfer from the ground to the exciton state in a GaAs/InGaAs quantum dot with phonon-induced dephasing. We use the time-evolving matrix product operator (TEMPO) method to propagate system in time and find that, for temperatures below $ 20 \ \text{K} $ and pulse duration up to $ 10 \ \text{ps} $, a very good transfer efficiency is obtained in general. We explain these results using a Bloch-like equation derived from a generalized Lindblad equation, which adequately describes system dynamics at lower temperatures. For higher temperatures, the transfer efficiency is significantly reduced except for subpicosecond pulses, where the shortcut Rabi frequency reduces to a delta pulse attaining a fast population inversion. The present work is expected to find application in quantum technologies which exploit quantum dots for single-photon generation on demand.
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assisted relaxation. A maximum exciton population of 0.67±0.06 is measured for a laser tuned 0.83 meV to higher energy. Furthermore, the phonon sideband is mapped using a two-color pump-probe technique, with its spectral form and magnitude in very good agreement with the result of path-integral calculations.
We study the evolution of an exciton confined in a quantum dot adiabatically controlled by a frequency-swept (chirped) laser pulse in the presence of carrier-phonon coupling. We focus on the dynamics induced by a linearly polarized beam and analyze the decoherence due to phonon-assisted biexciton generation. We show that if the biexciton state is shifted down by a few meV, as is typically the case, the resulting decoherence is strong even at low temperatures. As a result, efficient state preparation is restricted to a small parameter area corresponding to low temperatures, positive chirps and moderate pulse areas.