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Physica B Condensed Matter

Critical behavior near the Mott transition in the half-filled asymmetric Hubbard model

Anh-Tuan Hoang, Duc‐Anh Le

Published Jan 21, 2016• 3 citations
Publisher
DOI
10.1016/j.physb.2016.01.021

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We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $\ensuremath{\sigma}(\ensuremath{\omega})$ based on a cellular dynamical mean-field theory including vertex corrections inside the cluster. Near the Mott critical end point, a Drude analysis in the metallic region suggests that the change in the Drude weight is important rather than that in the transport scattering rate for the Mott transition. In the insulating region, there emerges an ``in-gap'' peak in $\ensuremath{\sigma}(\ensuremath{\omega})$ at low $\ensuremath{\omega}$ near the Mott transition, and this smoothly connects to the Drude peak in the metallic region with decreasing Coulomb repulsion. We find that the weight of these peaks exhibits a power-law behavior upon controlling Coulomb repulsion at the critical temperature. The obtained critical exponent suggests that conductivity does not correspond to magnetization or energy density of the Ising universality class in contrast to several previous works.