FLEX Study on Two-Dimensional t-t -Hubbard Model: Enhanced Charge Susceptibility near Antiferromagnetic Mott Transition
K Morita
Abstract
Since the two-dimensional (2D) Hubbard model is one of the simplest model having features of layered cuprates which is widely known as high-Tc superconductor, many researchers pay their attention to this model. One of the purposes of this thesis is to discuss, on the basis of the fluctuation exchange (FLEX) approximation which satisfies the conservation law and takes account of the spin fluctuations, how the shape of the Fermi surface (FS) is modified and how the charge susceptibility behaves in the 2D t−t′−U Hubbard model near half filling as strength of the onsite Coulomb interaction U is increased. The antiferromagnetic (AF) correlation length is shown to be enhanced as the Coulomb interaction get closer to the critical value Uc for the critical point to onset AF order. At the same time, the shape of the renormalized FS is deformed showing the tendency of nesting and the charge susceptibility shows a pronounced enhancement near Uc. This result is consistent with experimental observations in under-doped cuprates LSCO. The enhancement of the charge susceptibility is so large that it cannot be explained by the van Hove singularity of the density of states (DOS) due to the nesting of FS. Indeed, the van Hove singularity of DOS is easily cancelled by the RPA type contribution. Another purpose of this thesis is to investigate an origin of the divergent charge susceptibility. It is expected that the effect of the AF spin fluctuations is the main origin for this divergence of the charge susceptibility from the fact that the anomaly is observed near the antiferromagnetic insulating (AFI) phase. In order to verify this physical picture, we calculate the Aslamasov-Larkin (AL) type contribution to the charge susceptibility, and compare its value with that calculated by the FLEX approximation. The result is that the AL-type contribution nearly exhaust the value of the enhanced charge susceptibility where the charge susceptibility is enhanced enough as