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Bulletin of the American Physical Society

Theoretical Characterization of Nonlocal Two-qubit Operations for Electrostatically Coupled Singlet-Triplet Qubits

F. A. Calderon-Vargas, J. P. Kestner

Published Mar 3, 2014• 0 citations
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Mechanisms of S−T+S-T_+S−T+​ coupling in singlet-triplet qubits
We present a donor-based quadruple-quantum-dot device, designed to host two singlet–triplet qubits fabricated by scanning tunnelling microscope lithography, with just two leads per qubit. The design is geometrically compact, with each pair of dots independently controlled via one gate and one reservoir. The reservoirs both supply electrons for the dots and measure the singlet–triplet state of each qubit via dispersive sensing. We verify the locations of the four phosphorus donor dots via an electrostatic model of the device. We study one of the observed singlet–triplet states with a tunnel coupling of 39 GHz and a S 0 -to- T – decay of 2 ms at zero detuning. We measure a 5 GHz electrostatic interaction between two pairs of dots separated by 65 nm. The results outline a low-gate-density pathway to a scalable 1D building block of atomic-precision singlet–triplet qubits using donors with dispersive readout.
We report coherent operation of a singlet-triplet qubit controlled by the spatial arrangement of two confined electrons in an adjacent double quantum dot that is electrostatically coupled to the qubit. This four-dot system is the specific device geometry needed for two-qubit operations of a two-electron spin qubit. We extract the strength of the capacitive coupling between qubit and adjacent double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways toward implementation of a universal set of gates for singlet-triplet spin qubits.