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Bulletin of the American Physical Society

Dissipation-Induced Quantum Phase Transition in a Resonant Level

Henok T. Mebrahtu, Ivan Valerievich Borzenets, Dong E. Liu, Huaixiu Zheng, Yuriy Bomze, Alex I. Smirnov, Harold U. Baranger, Gleb Finkelstein

Published Feb 29, 2012• 0 citations
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We study tunneling through a resonant level connected to two dissipative bosonic baths: one is the resistive environment of the source and drain leads, while the second comes from coupling to potential fluctuations on a resistive gate. We show that several quantum phase transitions (QPT) occur in such a model, transitions which emulate those found in interacting systems such as Luttinger liquids or Kondo systems. We first use bosonization to map this dissipative resonant level model to a resonant level in a Luttinger liquid, one with, curiously, two interaction parameters. Drawing on methods for analyzing Luttinger liquids at both weak and strong coupling, we obtain the phase diagram. For strong dissipation, a Berezinsky-Kosterlitz-Thouless QPT separates strong-coupling and weak-coupling (charge localized) phases. In the source-drain symmetric case, all relevant backscattering processes disappear at strong coupling, leading to perfect transmission at zero temperature. In fact, a QPT occurs as a function of the coupling asymmetry or energy of the resonant level: the two phases are (i) the system is cut into two disconnected pieces (zero transmission), or (ii) the system is a single connected piece with perfect transmission, except for a disconnected fractional degree of freedom. The latter arises from the competition between the two fermionic leads (source and drain), as in the two-channel Kondo effect.
The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work [Phys. Rev. Lett 102, 216803 (2009)]. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage VVV. In the linear-response regime $V\ensuremath{\rightarrow}0$, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V<TV<TV<T, while it obeys a distinct nonequilibrium profile for V>TV>TV>T. We furthermore provide different signatures of the transition in the finite-frequency current noise and ac conductance via a recently developed functional renormalization group (FRG) approach. The generalization of our analysis to nonequilibrium transport through a resonant level coupled to two chiral Luttinger liquid leads, generated by fractional quantum Hall edge states, is discussed. Our work on the dissipative resonant level has direct relevance to experiments on a quantum dot coupled to a resistive environment, such as H. Mebrahtu et al., [Nature (London) 488, 61 (2012)].