Synthetic diamond has recently emerged as a candidate material for a number of quantum applications, including quantum information processing and quantum sensing. In this talk, I will show how single nitrogen-vacancy (NV) color centers can be created near the diamond surface and used as nanoscale sensors of electric and magnetic fields. I will also demonstrate novel dynamical decoupling techniques allowing to improve the sensitivity of diamond quantum sensors and discuss applications of small-scale quantum registers for nanoscale NMR. Applications of NV centers for hyperpolarisation of nuclear spins and application of optical spin polarization in MRI will be presented.Synthetic diamond has recently emerged as a candidate material for a number of quantum applications, including quantum information processing and quantum sensing. In this talk, I will show how single nitrogen-vacancy (NV) color centers can be created near the diamond surface and used as nanoscale sensors of electric and magnetic fields. I will also demonstrate novel dynamical decoupling techniques allowing to improve the sensitivity of diamond quantum sensors and discuss applications of small-scale quantum registers for nanoscale NMR. Applications of NV centers for hyperpolarisation of nuclear spins and application of optical spin polarization in MRI will be presented.

Quantum Effects and Measurement Techniques in Biology and BiophotonicsMar 4, 20260 citations

Scalable nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures

Sunghoon Kim, Paz London, Daipeng Yang +6 more

Abstract Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen δ -doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of ~ 4 nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average ${T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}$ T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.Abstract Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen δ -doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of ~ 4 nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average $${T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}$$ T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.

arXiv:2502.01198Nature CommunicationsNov 6, 20255 citations

Strongly coupled diamond spin qubits by molecular nitrogen implantation

T. Yamamoto, Christoph Müller, Liam Paul McGuinness +7 more

Ionized nitrogen molecules ( ${}^{15}$ N ${}_{2}^{+}$ ) are used as efficient point sources for creating NV${}^{\ensuremath{-}}$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of ${}^{12}$ C ${}^{+}$ increased the yield of pairs, and a ${}^{13}$ C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three-spin register. These results mark an important step towards realization of multiqubit systems and scalable NV${}^{\ensuremath{-}}$ quantum registers.Ionized nitrogen molecules (${}^{15}$N${}_{2}^{+}$) are used as efficient point sources for creating NV${}^{\ensuremath{-}}$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of ${}^{12}$C${}^{+}$ increased the yield of pairs, and a ${}^{13}$C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three-spin register. These results mark an important step towards realization of multiqubit systems and scalable NV${}^{\ensuremath{-}}$ quantum registers.

arXiv:1311.0978Physical Review BNov 4, 201352 citations

Quantum control and engineering of single spins in diamond

D.M. Toyli

Jan 1, 20130 citations

{T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}

T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.

Ionized nitrogen molecules (

{}^{15}

{}_{2}^{+}

) are used as efficient point sources for creating NV${}^{\ensuremath{-}}$ pairs in diamond with nanoscale spatial separation and up to 55 kHz magnetic coupling strength. Co-implantation of

{}^{12}

{}^{+}

increased the yield of pairs, and a

{}^{13}

C-depleted diamond allowed 0.65 ms coherence times to be obtained. Further coupling to a third dark spin provided a strongly coupled three-spin register. These results mark an important step towards realization of multiqubit systems and scalable NV${}^{\ensuremath{-}}$ quantum registers.