Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optical Fiber Communication Conference

Enhancing Small-Signal Cross-Gain Modulation of Quantum-Dot Optical Amplifiers by Injecting Carriers to Excited States

Jungho Kim, M. Laemmlin, Christian Meuer, Sven Liebich, D. Bimberg, G. Eisenstein

Published Feb 1, 2008• 1 citation
Publisher

Abstract

We numerically and experimentally demonstrate that high-speed small-signal cross- gain modulation of quantum-dot optical amplifiers can be improved by injecting carriers to excited states, which increases the amplifier's gain recovery time due to spectral hole burning.
DOI
10.1109/ofc.2008.4528576

Related papers

Ultrafast signal processing in quantum dot amplifiers through effective spectral holeburning

T.W. Berg, Jesper Mørk, Alexander V. Uskov

Summary form only given. Significant progress has been obtained on quantum dot (QD) lasers, but the possible advantages of QD amplifiers are not yet clear. We show here that a relatively slow coupling between the optically active QD carrier states and the surrounding carrier reservoir can lead to efficient gain modulation suitable for ultrafast signal processing. The basis of this property is that the process of spectral hole burning (SHB) can become very effective. We consider a traveling wave optical amplifier consisting of the dot states, which interact with the optical signal (no inhomogeneous broadening included), and the wetting layer (WL), where current is injected. Time evolution is described by two coupled rate equations. Carrier capture from WL to dots is characterized by the capture time /spl tau//sub 0/.

Conference on Lasers and Electro-Optics•Jun 25, 2003•3 citations

Simulation on gain recovery of quantum dot semiconductor optical amplifiers by rate equation

Jin‐Long Xiao, Yue‐De Yang, Yong‐Zhen Huang

The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.

International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)•Sep 1, 2009•0 citations

Cross gain modulation in quantum dot semiconductor optical amplifiers under the influence of the Probe

Ahmed H. Flayyih, Seyedeh Hamideh Kazemi, Amin Habbeb AL-Khursan

The Pulse effect on the cross-gain modulation (XGM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is investigated using the combining of the SOA power with the QD rate equations system. The QDs structure includes three regions: ground state (GS), excited state (ES) and wetting layer (WL). Thus, a set of rate equations for pump and probe signals is introduced for both steady-state and small-signal power values, which are solved numerically. The pulse shape was included in the analysis, for pump and probe signals. The theoretical results showed a good agreement with the experimental results. It was found that decreasing pulse width of pump/probe ratio is efficient to increase XGM efficiency and bandwidth.

University of Thi-Qar Journal of Science•Dec 26, 2023•0 citations

Effects of Spectral Broadening and Cross Relaxation on the Gain Saturation Characteristics of Quantum Dot Laser Amplifiers

Yoshihiro Nambu, Akihisa Tomita, Hideaki Saito Hideaki Saito +1 more

Spectral broadening and cross relaxation of an aggregate of highly carrier-injected quantum dots have been studied experimentally by evaluating the gain saturation and optical-wave mixing characteristics of traveling-wave laser amplifiers that include self-assembled 0.98-µm InGaAs dots. Measured signal-gain spectra at room temperature showed that the gain decreases over the entire gain spectra when an intense and narrow-linewidth saturating signal is injected at a higher-order subband transition of the quantum dot. Differential-gain spectrum was calculated from the saturated and unsaturated signal gain spectra, and revealed asymmetric gain saturation with respect to the wavelength of the saturating signal. These results suggest that cross relaxation is so fast that the dot aggregate has a homogeneously broadened gain spectrum. Self-saturation and cross-saturation characteristics, and the detuning characteristics of highly nondegenerate four-wave mixing were also investigated. The latter revealed that the characteristic times of two cross-relaxation processes are about 1 ps and 100 fs.

Japanese Journal of Applied Physics•Sep 1, 1999•22 citations

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

Jungho Kim

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

Journal of the Korean Physical Society•Feb 1, 2014•5 citations

Gain dynamics and saturation in semiconductor quantum dot amplifiers

T.W. Berg, Jesper Mørk, J. M. Hvam

Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two carrier populations in terms of a simple rate equation model. Based on the steady-state and small-signal properties of the model, we analyse and discuss the optical modulation response and the four-wave mixing properties of QD semiconductor optical amplifiers, in particular emphasizing the role of ultrafast gain dynamics.

New Journal of Physics•Nov 27, 2004•48 citations
Summary form only given. Significant progress has been obtained on quantum dot (QD) lasers, but the possible advantages of QD amplifiers are not yet clear. We show here that a relatively slow coupling between the optically active QD carrier states and the surrounding carrier reservoir can lead to efficient gain modulation suitable for ultrafast signal processing. The basis of this property is that the process of spectral hole burning (SHB) can become very effective. We consider a traveling wave optical amplifier consisting of the dot states, which interact with the optical signal (no inhomogeneous broadening included), and the wetting layer (WL), where current is injected. Time evolution is described by two coupled rate equations. Carrier capture from WL to dots is characterized by the capture time /spl tau//sub 0/.
The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.
The Pulse effect on the cross-gain modulation (XGM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is investigated using the combining of the SOA power with the QD rate equations system. The QDs structure includes three regions: ground state (GS), excited state (ES) and wetting layer (WL). Thus, a set of rate equations for pump and probe signals is introduced for both steady-state and small-signal power values, which are solved numerically. The pulse shape was included in the analysis, for pump and probe signals. The theoretical results showed a good agreement with the experimental results. It was found that decreasing pulse width of pump/probe ratio is efficient to increase XGM efficiency and bandwidth.
Spectral broadening and cross relaxation of an aggregate of highly carrier-injected quantum dots have been studied experimentally by evaluating the gain saturation and optical-wave mixing characteristics of traveling-wave laser amplifiers that include self-assembled 0.98-µm InGaAs dots. Measured signal-gain spectra at room temperature showed that the gain decreases over the entire gain spectra when an intense and narrow-linewidth saturating signal is injected at a higher-order subband transition of the quantum dot. Differential-gain spectrum was calculated from the saturated and unsaturated signal gain spectra, and revealed asymmetric gain saturation with respect to the wavelength of the saturating signal. These results suggest that cross relaxation is so fast that the dot aggregate has a homogeneously broadened gain spectrum. Self-saturation and cross-saturation characteristics, and the detuning characteristics of highly nondegenerate four-wave mixing were also investigated. The latter revealed that the characteristic times of two cross-relaxation processes are about 1 ps and 100 fs.
The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.
Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two carrier populations in terms of a simple rate equation model. Based on the steady-state and small-signal properties of the model, we analyse and discuss the optical modulation response and the four-wave mixing properties of QD semiconductor optical amplifiers, in particular emphasizing the role of ultrafast gain dynamics.