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Bulletin of the American Physical Society

Density versus spin-density functional in DFT+U and DFT+DMFT

Hyowon Park, Andrew J. Millis, Chris A. Marianetti

Published Mar 5, 2015• 0 citations
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Finite-temperature adiabatic-connection reduced density-matrix functional theory: a unified framework for i-DMFT and TAO-DFT

Jingang Han, Huanjing Gong, Kai Luo +2 more

Accurately describing chemical bond breaking requires capturing strong/static electron correlation, a major challenge for single-reference self-consistent-field methods such as Hartree--Fock and Kohn--Sham density-functional theory (DFT). Fractional occupations substantially improve this situation, as demonstrated by information-density-matrix-functional theory (i-DMFT) and thermally-assisted-occupation DFT (TAO-DFT). Although useful, they are formulated within rather different theoretical frameworks, are somewhat semi-empirical, and their relationship remains unclear. Here we introduce finite-temperature adiabatic-connection reduced density-matrix functional theory (FT-AC-RDMFT), in which i-DMFT and TAO-DFT emerge as different reductions of a unified framework. The effective eigenvalue equation for natural orbitals and the Fermi--Dirac occupation numbers follow directly from the variational principle, while a thermal adiabatic connection relates the empirical entropy coefficient of i-DMFT to a characteristic temperature of the auxiliary non-interacting system. Within this framework, i-DMFT is the exact-exchange-based reduction, whereas TAO-DFT results when exact exchange is replaced by a density-based exchange-correlation functional. Numerical calculations confirm that i-DMFT, apart from a constant, coincides with the exact-exchange realization of the framework, and show that the improved dissociation behavior from finite-temperature occupations extends beyond exact exchange to hybrid and semilocal density functionals. For strongly correlated V2O3, finite-temperature occupations substantially reduce the severely overestimated non-magnetic LDA bulk modulus, bringing it close to experiment. These results establish FT-AC-RDMFT as a common theoretical foundation for finite-temperature occupation-based electronic-structure methods in molecular and solid-state systems.

arXiv:2610.14706•Oct 10, 2026•0 citations
Accurately describing chemical bond breaking requires capturing strong/static electron correlation, a major challenge for single-reference self-consistent-field methods such as Hartree--Fock and Kohn--Sham density-functional theory (DFT). Fractional occupations substantially improve this situation, as demonstrated by information-density-matrix-functional theory (i-DMFT) and thermally-assisted-occupation DFT (TAO-DFT). Although useful, they are formulated within rather different theoretical frameworks, are somewhat semi-empirical, and their relationship remains unclear. Here we introduce finite-temperature adiabatic-connection reduced density-matrix functional theory (FT-AC-RDMFT), in which i-DMFT and TAO-DFT emerge as different reductions of a unified framework. The effective eigenvalue equation for natural orbitals and the Fermi--Dirac occupation numbers follow directly from the variational principle, while a thermal adiabatic connection relates the empirical entropy coefficient of i-DMFT to a characteristic temperature of the auxiliary non-interacting system. Within this framework, i-DMFT is the exact-exchange-based reduction, whereas TAO-DFT results when exact exchange is replaced by a density-based exchange-correlation functional. Numerical calculations confirm that i-DMFT, apart from a constant, coincides with the exact-exchange realization of the framework, and show that the improved dissociation behavior from finite-temperature occupations extends beyond exact exchange to hybrid and semilocal density functionals. For strongly correlated V2O3, finite-temperature occupations substantially reduce the severely overestimated non-magnetic LDA bulk modulus, bringing it close to experiment. These results establish FT-AC-RDMFT as a common theoretical foundation for finite-temperature occupation-based electronic-structure methods in molecular and solid-state systems.