Nonlinear Vacuum Rabi Splitting in Semiconductor Microcavities
June‐Koo Kevin Rhee, Richard K. Lai, Theodore B. Norris +2 more
Recently, several research groups have reported investigations of vacuum-field Rabi splittings (VRS) in the linear response of strongly coupled semiconductor microcavities [1-4]. We have previously reported on the dynamics of time-domain vacuum Rabi oscillations, which are most easily understood in the framework of cavity exciton-polaritons, in which the in-plane momentum k|| is conserved [2], so that at each k|| a single cavity mode interacts with only a single mode of the electromagnetic field (Jaynes-Cummings model). In high Q semiconductor microcavities, the strong coupling between two-dimensional excitons and planar distributed- Bragg-reflector cavity modes results in several-meV splittings observable in the reflectivity or absorption spectrum. In the low excitation regime, the VRS is independent of light intensity incident on the cavity, since the vacuum-Rabi frequency exceeds the externally-driven Rabi frequency (in which case the Jaynes-Cummings model is equivalent to the linear dispersion of the coupled exciton-cavity system). As the incident light intensity is increased, two different effects may be expected to contribute to the nonlinear response. First, as long as the excitonic absorption is equivalent to a two-level system, higher-lying states of the Jaynes-Cummings ladder might be observable. Second, at high intensity phase-space filling and Coulomb screening of the exciton states results in a reduced oscillator strength which leads to a reduced VRS; this effect has no analogue in the case of atom-cavity systems. In this paper, we apply several ultrafast nonlinear techniques to investigate the nonlinear response of semiconductor microcavities.
Quantum Optoelectronics•Jan 1, 1995•1 citation