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Bulletin of the American Physical Society

Universal set of quantum gates for electron defect spin qubits in diamond and silicon carbide

Dmitry Solenov, Sophia E. Economou, T. L. Reinecke

Published Mar 19, 2013• 0 citations
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Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.

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Decoherence-protected entangling gates in a silicon carbide quantum node

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Solid-state color centers are promising candidates for nodes in quantum network architectures. However, realizing scalable and fully functional quantum nodes, comprising both processor and memory qubits with high-fidelity universal gate operations, remains a central challenge in this field. Here, we demonstrate a fully functional quantum node in silicon carbide, where electron spins act as quantum processors and nuclear spins serve as quantum memory. Specifically, we design a pulse sequence that combines dynamical decoupling with hyperfine interactions to realize decoherence-protected universal gate operations between the processor and memory qubits. Leveraging this gate, we deterministically prepare entangled states within the quantum node, achieving a fidelity of 90%, which exceeds the fault-tolerance threshold of certain quantum network architectures. These results open a pathway toward scalable and fully functional quantum nodes based on silicon carbide.

quant-pharXiv:2602.03296•npj Quantum Information•Feb 4, 2026•0 citations
We show that arbitrary NNN-qubit interactions among nuclear spins can be achieved efficiently in solid state quantum platforms, such as nitrogen vacancy centers in diamond, by exerting control only on the electron spin coupled to the nuclei. This allows to exploit nuclear spins as robust quantum registers and the direct measurement of nuclear many-body correlators. The method takes advantage of recently introduced dynamical decoupling techniques and avoids the necessity of external, slow, control on the nuclei. Our protocol is general, being applicable to other nuclear spin-based platforms with electronic spin defects acting as mediators as silicon carbide.
Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.
Solid-state color centers are promising candidates for nodes in quantum network architectures. However, realizing scalable and fully functional quantum nodes, comprising both processor and memory qubits with high-fidelity universal gate operations, remains a central challenge in this field. Here, we demonstrate a fully functional quantum node in silicon carbide, where electron spins act as quantum processors and nuclear spins serve as quantum memory. Specifically, we design a pulse sequence that combines dynamical decoupling with hyperfine interactions to realize decoherence-protected universal gate operations between the processor and memory qubits. Leveraging this gate, we deterministically prepare entangled states within the quantum node, achieving a fidelity of 90%, which exceeds the fault-tolerance threshold of certain quantum network architectures. These results open a pathway toward scalable and fully functional quantum nodes based on silicon carbide.