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Bulletin of the American Physical Society

Emergent Metal in Disordered Two Dimensional Mott Insulator

Oinam Nganba Meetei, Nandini Trivedi, E. Lahoud, Amit Kanigel

Published Mar 21, 2013• 0 citations
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We show that, with increasing randomness, the spectral gap in a 2D Mott-Hubbard insulator is destroyed first at a disorder V(c1), while antiferromagnetism persists up to a higher V(c2). Most unexpectedly, between V(c1) and V(c2) the system is metallic and is sandwiched between the Mott insulator below V(c1) and the Anderson insulator above V(c2). The metal is formed when the spectral gap gets destroyed locally in regions where the disorder potential is high enough to overcome the interelectron repulsion. This generates puddles with enhanced charge fluctuations that percolate with increasing disorder, resulting in a spatially inhomogeneous metallic phase.
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through statistical dynamical mean-field theory (statDMFT). This theory is a natural extension of dynamical mean-field theory (DMFT), which has been used with relative success in the past several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using the quantum Monte Carlo algorithm to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator ceased to be metastable. We also studied spatial fluctuations of local quantities, such as self-energy and local Green's function, and showed the appearance of metallic regions within the insulator and vice versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma [Y. Imry and S. K. Ma, Phys. Rev. Lett. 35, 1399 (1975).], the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.