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Superconductor-Insulator-Superconductor Mixers for the Herschel Space Observatory

Brian D. Jackson, Gert J. de Lange, T. Zijlstra, M. Kroug, J. Kooi, Jeffrey A. Stern, T. M. Klapwijk

Published Jan 1, 2006• 0 citations
OpenAlex

Abstract

Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO -Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorpo- rating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveg- uides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers.

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Low-noise 0.8-0.96- and 0.96-1.12-THz superconductor-insulator-superconductor mixers for the herschel space observatory

Brian D. Jackson, Gert J. de Lange, T. Zijlstra +4 more

Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO/sub 2/-Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorporating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveguides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers.

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Niobium titanium nitride-based superconductor-insulator-superconductor mixers for low-noise terahertz receivers

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Integrating NbTiN-based microstrip tuning circuits with traditional Nb superconductor-insulator-superconductor (SIS) junctions enables the low-noise operation regime of SIS mixers to be extended from below 0.7to1.15THz. In particular, mixers incorporating a NbTiN∕SiO2∕NbTiN microstrip tuning circuit offer low-noise performance below 0.8–0.85THz, although their sensitivities drop significantly at higher frequencies. Furthermore, a microstrip geometry in which NbTiN is used as the ground plane material only (NbTiN∕SiO2∕Al) yields significant improvements in the sensitivities of SIS mixers operating up to 1.15THz, with an upper operating frequency that depends upon the quality of the NbTiN layer, and thus its deposition process. Films deposited at room temperature have Tc=14.4K and ρn,20K∼60μΩcm, and offer low-noise performance up to 1THz, whereas films deposited at 400°C have Tc=16K and ρn,20K∼110μΩcm, and offer low-noise performance up to 1.15THz. Taken together, these results demonstrate that the high-frequency surface resistance of a NbTiN layer depends upon the film’s structural properties. Most significantly, the drop in performance that is seen at F>1THz in mixers incorporating NbTiN ground planes deposited at room temperature is attributed to nonhomogeneities in the structural and electrical properties of these films, as is the poor performance of mixers that incorporate NbTiN wiring layers at F>0.85THz. The development of these NbTiN-based microstrip tuning circuits will enable the production of low-noise SIS mixers for the 0.8–0.96- and 0.96–1.12-THz frequency bands of the Heterodyne Instrument for the Far Infrared on board the European Space Agency’s Herschel Space Observatory.

Journal of Applied Physics•May 25, 2005•29 citations

Development of 1.25 THz SIS mixer for Herschel Space Observatory

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We summarize the development and the delivery of two SIS mixers for the 1.1-1.25 THz band of the heterodyne spectrometer of Herschel Observatory (HSO). The quasi-optical SIS mixer has two Nb/AlN/NbTiN junctions with the area of 0.25 um2. The Josephson critical current density in the junction is 30-50 kA/cm2. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. With the new SIS mixers the test receiver maximum Y factor is 1.41. The minimum receiver uncorrected DSB noise temperature is 450 K. The SIS receiver noise corrected for the loss in the optics is 350-450 K across the 1100-1250 GHz band. The receiver has a uniform sensitivity in the full IF range of 4-8 GHz. The sub-micron sized SIS junction shape is optimized to ease the suppression of the Josephson current, and the receiver operation is stable. The measured mixer beam pattern is symmetrical and, in a good agreement with the requirements, has the f/d =4.25 at the central frequency of the operation band. The minimum DSB SIS receiver noise is close to 6 hv/k, the lowest value achieved thus far in the THz frequencies range.

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Low-noise THz Niobium SIS Mixers

Mei Bin

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

•Sep 1, 1997•8 citations

Low noise 1.2 THz SIS mixer for Herschel radio observatory

Alexandre Karpov, David A. B. Miller, F. Rice +4 more

We present a low noise SIS mixer developed for the 1.2 THz band of the heterodyne spectrometer of the Herschel Space Observatory. With the launch of the Herschel SO in 2007, this device will be among the first SIS mixers flown in space. This SIS mixer has a quasi optical design, with a double slot planar antenna and an extended spherical lens made of pure Si. The SIS junctions are Nb/A1N/NbTiN with a critical current density of about 30 KA/cm2 and with the junction area of a quarter of a micron square. Our mixer circuit uses two SIS junctions biased in parallel. To improve the simultaneous suppression of the Josephson current in each of them, we use diamond-shaped junctions. A low loss Nb/Au micro-strip transmission line is used for the first time in the mixer circuit well above the gap frequency of Nb. The minimum uncorrected Double Sideband receiver noise is 550 K (Y=1.34). The minimum receiver noise corrected for the local oscillator beam splitter and for the cryostat window is 340 K, about 6 hv/k, the lowest value achieved thus far in the THz frequencies range.

•Jan 1, 2009•1 citation
Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO -Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorpo- rating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveg- uides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers.
Heterodyne mixers incorporating Nb SIS junctions and NbTiN-SiO/sub 2/-Al microstrip tuning circuits offer the lowest reported receiver noise temperatures to date in the 0.8-0.96- and 0.96-1.12-THz frequency bands. In particular, improvements in the quality of the NbTiN ground plane of the SIS devices' on-chip microstrip tuning circuits have yielded significant improvements in the sensitivity of the 0.96-1.12-THz mixers relative to previously presented results. Additionally, an optimized RF design incorporating a reduced-height waveguide and suspended stripline RF choke filter offers significantly larger operating bandwidths than were obtained with mixers that incorporated full-height waveguides near 1 THz. Finally, the impact of junction current density and quality on the performance of the 0.8-0.96-THz mixers is discussed and compared with measured mixer sensitivities, as are the relative sensitivities of the 0.8-0.96- and 0.96-1.12-THz mixers.
Integrating NbTiN-based microstrip tuning circuits with traditional Nb superconductor-insulator-superconductor (SIS) junctions enables the low-noise operation regime of SIS mixers to be extended from below 0.7to1.15THz. In particular, mixers incorporating a NbTiN∕SiO2∕NbTiN microstrip tuning circuit offer low-noise performance below 0.8–0.85THz, although their sensitivities drop significantly at higher frequencies. Furthermore, a microstrip geometry in which NbTiN is used as the ground plane material only (NbTiN∕SiO2∕Al) yields significant improvements in the sensitivities of SIS mixers operating up to 1.15THz, with an upper operating frequency that depends upon the quality of the NbTiN layer, and thus its deposition process. Films deposited at room temperature have Tc=14.4K and ρn,20K∼60μΩcm, and offer low-noise performance up to 1THz, whereas films deposited at 400°C have Tc=16K and ρn,20K∼110μΩcm, and offer low-noise performance up to 1.15THz. Taken together, these results demonstrate that the high-frequency surface resistance of a NbTiN layer depends upon the film’s structural properties. Most significantly, the drop in performance that is seen at F>1THz in mixers incorporating NbTiN ground planes deposited at room temperature is attributed to nonhomogeneities in the structural and electrical properties of these films, as is the poor performance of mixers that incorporate NbTiN wiring layers at F>0.85THz. The development of these NbTiN-based microstrip tuning circuits will enable the production of low-noise SIS mixers for the 0.8–0.96- and 0.96–1.12-THz frequency bands of the Heterodyne Instrument for the Far Infrared on board the European Space Agency’s Herschel Space Observatory.
We summarize the development and the delivery of two SIS mixers for the 1.1-1.25 THz band of the heterodyne spectrometer of Herschel Observatory (HSO). The quasi-optical SIS mixer has two Nb/AlN/NbTiN junctions with the area of 0.25 um2. The Josephson critical current density in the junction is 30-50 kA/cm2. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. With the new SIS mixers the test receiver maximum Y factor is 1.41. The minimum receiver uncorrected DSB noise temperature is 450 K. The SIS receiver noise corrected for the loss in the optics is 350-450 K across the 1100-1250 GHz band. The receiver has a uniform sensitivity in the full IF range of 4-8 GHz. The sub-micron sized SIS junction shape is optimized to ease the suppression of the Josephson current, and the receiver operation is stable. The measured mixer beam pattern is symmetrical and, in a good agreement with the requirements, has the f/d =4.25 at the central frequency of the operation band. The minimum DSB SIS receiver noise is close to 6 hv/k, the lowest value achieved thus far in the THz frequencies range.
We present the development of a low noise 1.2 THz and 1.4 THz SIS mixers for heterodyne spectrometry on the Stratospheric Observatory For Infrared Astronomy (SOFIA) and Herschel Space Observatory. This frequency range is above the limit for the commonly used Nb quasi particle SIS junctions, and a special type of hybrid Nb/AlN/NbTiN junctions has been developed for this project. We are using a quasi-optical mixer design with two Nb/AlN/NbTiN junctions with an area of 0.25. The SIS junction tuning circuit is made of Nb and gold wire layers. At 1.13 THz the minimum SIS receiver uncorrected noise temperature is 450 K. The SIS receiver noise corrected for the loss in the LO coupler and in the cryostat optics is 350-450 K across 1.1-1.25 THz band. The receiver has a uniform sensitivity in a full 4-8 GHz IF band. The 1.4 THz SIS receiver test at 1.33-1.35 THz gives promising results, although limited by the level of available LO power. Extrapolation of the data obtained with low LO power level shows a possibility to reach 500 K DSB receiver noise using already existing SIS mixer.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
We present a low noise SIS mixer developed for the 1.2 THz band of the heterodyne spectrometer of the Herschel Space Observatory. With the launch of the Herschel SO in 2007, this device will be among the first SIS mixers flown in space. This SIS mixer has a quasi optical design, with a double slot planar antenna and an extended spherical lens made of pure Si. The SIS junctions are Nb/A1N/NbTiN with a critical current density of about 30 KA/cm2 and with the junction area of a quarter of a micron square. Our mixer circuit uses two SIS junctions biased in parallel. To improve the simultaneous suppression of the Josephson current in each of them, we use diamond-shaped junctions. A low loss Nb/Au micro-strip transmission line is used for the first time in the mixer circuit well above the gap frequency of Nb. The minimum uncorrected Double Sideband receiver noise is 550 K (Y=1.34). The minimum receiver noise corrected for the local oscillator beam splitter and for the cryostat window is 340 K, about 6 hv/k, the lowest value achieved thus far in the THz frequencies range.