Strongly correlated electron materials are materials where the electron-electron interaction is so strong it is of primary importance in determining how the materials behave. These materials may be tuned to pass through a metal-insulator transition as a function of chemical doping, pressure, or temperature. This tunability of their properties makes them good candidates for so-called "smart materials" that may change their properties to respond to the particular needs of a device. We employ a massively parallel algorithm to solve exactly for the response of these strongly correlated materials to the presence of a large electric field, including all nonlinear and non-equilibrium effects. The work was performed as a CAP Phase IIproject on the ERDC XT3 computer in the Winter of 2006. The code displayed good scalability up to approximately 3000 processors although most production runs employed about 1500 processors, because of machine load
Strongly correlated electron materials are materials where the electron-electron interaction is so strong it is of primary importance in determining how the materials behave. These materials may be tuned to pass through a metal-insulator transition as a function of chemical doping, pressure, or temperature. This tunability of their properties makes them good candidates for so-called "smart materials" that may change their properties to respond to the particular needs of a device. We employ a massively parallel algorithm to solve exactly for the response of these strongly correlated materials to the presence of a large electric field, including all nonlinear and non-equilibrium effects. The work was performed as a CAP Phase IIproject on the ERDC XT3 computer in the Winter of 2006. The code displayed good scalability up to approximately 3000 processors although most production runs employed about 1500 processors, because of machine load
The nonlinear response of a material to a large electric field (steady or pulsed) often determines the ultimate performance of the material for electronics applications. The formalism for understanding nonlinear effects in conventional semiconductors is well understood. The formalism is less well developed for so-called ``smart'' materials that are tuned to lie close to the metal-insulator transition. Here we show that the nonlinear response of a strongly correlated electronic material can be calculated with a massively parallel algorithm by discretizing a continuous matrix operator on the Kadanoff-Baym contour in real time. We benchmark the technique by examining the solutions when the field vanishes and comparing the results to exact results from an equilibrium formalism. We briefly discuss the numerical issues associated with the case of a large electric field and present results that show how the Bloch oscillations become damped as the scattering due to electron correlations increases.
The nonlinear response of a material to a large electric field (steady or pulsed) often determines the ultimate performance of the material for electronics applications. The formalism for understanding nonlinear effects in conventional semiconductors is well understood. The formalism is less well developed for so-called “smart” materials that are tuned to lie close to the metalinsulator transition. Here we show that the nonlinear response of a strongly correlated electronic material can be calculated with a massively parallel algorithm by discretizing a continuous matrix operator on the Kadanoff-Baym contour in real time. We benchmark the technique by examining the solutions when the field vanishes and comparing the results to exact results from an equilibrium formalism. We briefly discuss the numerical issues associated with the case of a large electric field and present results that show how the Bloch oscillations become damped as the scattering due to electron correlations increases.
The physics of strongly correlated materials poses one of the most challenging problems in condensed-matter sciences. Standard approximations applicable to wide classes of materials such as the local density approximation fail, due to the importance of the Coulomb repulsion between localized electrons. Instead, we resort to non-perturbative many-body methods. The calculations are, however, only feasible for rather small model systems. The full Hamiltonian of a real material is approximated by a model Hamiltonian comprising only the most important electronic degrees of freedom, while the effect of all other electrons is included in an average way by renormalizing the parameters. Realistic calculations of strongly correlated materials need to include sufficiently many of these electronic degrees of freedom. The new generation of massively parallel supercomputers allows for these realistic calculations. However, exploiting their computational power requires newly devised algorithms. As a solver we use the Lanczos method, which needs the full many-body state of the correlated system. It is thus limited by the available main memory. The foremost problem for a distributed-memory implementation is that the multiplication of the Hamiltonian to the many-body state leads to highly non-local memory access patterns. A simple yet important observation leads to an efficient solution: in the kinetic term of the Hamiltonian the electron-spin is conserved. Thus, writing the many-body vector as a matrix v(iup,idn), where the indices label spin-configurations, we find that the hopping term only connects vector elements that differ in one index. Hence, storing entire slices v(iup,:) on one node, the kinetic term for the spin-down electrons is local to that process. After transposing v, the same is true for the hopping of the spin-up electrons. With an efficient matrix transpose, implemented via MPI collectives, we thus obtain a version of the Lanczos method that efficiently well on JUBL, Jülich's Blue Gene/L. Using the code we treated two-orbital Hubbard Models which show interesting Mott-band insulator transitions. Kohn's criterium which determines the phase of a system by ground-state properties alone, namely the response of the ground-state energies to a vector potential, was employed. This vector potential can be equivalently regarded as a change in boundary conditions, requiring complex wave vectors. We found that half-filled systems become metallic in the region between a band and Mott insulating phase. To extrapolate to infinite system sizes and therefore getting access to an arbitrarily high resolution in reciprocal space, we use cluster perturbation theory (CPT). It works by diagonalizing a finite cluster exactly and then treating the hopping between identical clusters perturbatively in strong coupling perturbation theory. This leads to an effectively infinite chain. Due to our efficient Lanczos implementation it is possible to calculate relatively large clusters, minimizing finite-size effects. The combination of our Lanczos code and CPT allowed for a treatment of the the organic metal TTF-TCNQ. We were able to solve a long-standing problem in the interpretation of its experimental spectra. Being an interesting one-dimensional metal TTF-TCNQ has been studied thoroughly for more than 30 years. Theoretical estimates as well as experimental measurements suggest values for the parameters of the Hubbard model t and U. With these values Hubbard model calculations show qualitatively the same features as APRES experiments, namely the signatures of spin-charge separation at the Gamma-point. But in order to fit the experimental data to the numerical calculations t has to be doubled, which translates into a broadening of the spectra. This ad-hoc adjustment is not only unsatisfactory but also the temperature dependence of the spectral function is incorrectly reproduced. We resolved this problem by properly including nearest-neighbor Coulomb interactions. Recent DFT calculations show that indeed the commonly used values of t and U are correct. But Coulomb interactions between electrons on neighboring sites are also significant and must not be neglected. Thus, we studied the effect of the next-neighbor interaction parameter V being at about U/2. Including V in our Lanczos calculations for obtaining the angular-integrated spectral function shows that its effect is to broaden the spectra, comparable to increasing the value of t. Moreover, we found that doubling t indeed mimics the effect of Vapprox U/2. Surprisingly, the broadening of the spectrum as a result of V can be understood in first-order Rayleigh-Schrödinger perturbation theory.
In condensed-matter physics, strongly-correlated systems refer to materials that exhibit variety of fascinating properties and ordered phases, depending on temperature, doping, and other factors. Such unique properties most notably arise due to strong electron-electron interactions, and in some cases due to interactions involving other quasiparticles as well. Electronic correlation effects are non-trivial that one may need a sufficiently accurate approximation technique with quite heavy computation, such as Quantum Monte-Carlo, in order to capture particular material properties arising from such effects. Meanwhile, less accurate techniques may come with lower numerical cost, but the ability to capture particular properties may highly depend on the choice of approximation. Among the many-body techniques derivable from Feynman diagrams, we aim to formulate algorithmic implementation of the Ladder Diagram approximation to capture the effects of electron-electron interactions. We wish to investigate how these correlation effects influence the temperature-dependent properties of strongly-correlated metals and semiconductors. As we are interested to study the temperature-dependent properties of the system, the Ladder diagram method needs to be applied in Matsubara frequency domain to obtain the self-consistent self-energy. However, at the end we would also need to compute the dynamical properties like density of states (DOS) and optical conductivity that are defined in the real frequency domain. For this purpose, we need to perform the analytic continuation procedure. At the end of this study, we will test the technique by observing the occurrence of metal-insulator transition in strongly-correlated metals, and renormalization of the band gap in strongly-correlated semiconductors.
Correlated systems are a wide class of materials in which the strong electron-electron repulsion is the origin of very fascinating and unusual properties, among which metal-to-insulator transitions and high temperature superconductivity are the most striking examples. In the recent years, the fast development of non-adiabatic probing techniques opened new interesting perspectives for the investigation of such materials in non-equilibrium conditions. In this thesis, we discuss the theoretical description of few relevant cases which represent different examples of non-equilibrium phenomena in correlated materials. In particular, we will focus on the dynamics following a sudden excitation and the coupling to an external driving field. As a first example we consider the dynamics across a phase transition, namely we explore the possibility of driving a phase transition as the result of a sudden excitation, as e.g. the coupling with a short light pulse. We consider systems showing different equilibrium phases and study the conditions under which the off-equilibrium dynamics may lead to non-trivial dynamical phase transitions. A different case is represented by the dynamics induced by a driving electric field. This problem is particularly relevant for the possible applications of correlated materials in electronic devices. Here we consider the paradigmatic case of a correlated material coupled to external sources which impose a finite bias across the system. We analyze the formation and the properties of the non-equilibrium stationary states in which a finite current flows through the system. This allows us to study the non-linear response properties of a correlated system. In this context, a particularly relevant aspect is the problem of the dielectric breakdown of a Mott insulator, namely the formation of conducting states in the Mott insulating phase. In this thesis we explore different mechanisms leading to such possibility. First we discuss a quantum tunneling mechanism of carriers driven across the insulating gap by the effect of strong electric-fields. Eventually, we discuss the possibility of a resistive transition from an insulating to a metallic state induced by the application of an external electric-field.
Novel physics arises when strongly correlated system is driven out of equilibrium by external fields. Dramatic changes in physical properties, such as conductivity, are empirically observed in strongly correlated materials under high electric field. In particular, electric-field driven metal-insulator transitions are well-known as the resistive switching effect in a variety of materials, such as VO2, V2O3 and other transition metal oxides. To satisfactorily explain both the phenomenology and its underlying mechanism, it is required to model microscopically the out-of-equilibrium dissipative lattice system of interacting electrons. In this thesis, we developed a systematic method of modeling non-equilibrium steady states for dissipative lattice systems by means of Non-equilibrium Green's function and Dynamical Mean Field Theory. We firstly establish a "minimum model" to formulate the strong-field transport in non-interacting dissipative electron lattice. This model is exactly soluble and convenient for discussing energy dissipation and steady-state properties. The formalism is then combined with Dynamical Mean Field Theory to provide a systematic framework describing the nonequilibrium steady-state of correlated materials. We use the formalism to study the strong-field transport properties of correlated materials, Mott insulators and Dirac electrons in graphene. We concentrate on the microscopic description of resistive switching. Of particular interest is the filament formation during the dynamical phase transition, which has been interpreted as a result of the delicate interplay between dissipation and Mott physics. We will also examine IV characteristics and particularly the current saturation of Dirac electrons in graphene. The arXiv version has been updated with minor modifications and corrections.