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IEEE Transactions on Applied Superconductivity

Electrical Characteristics of Superconducting Nanowire Single Photon Detector

D. K. Liu, Lixing You, Shijian Chen, Xiaoyan Yang, Z. Wang, Yongliang Wang, X. M. Xie, M. H. Jiang

Published Feb 7, 2013• 21 citations
Publisher

Abstract

By changing the bias scheme of a superconducting nanowire single photon detector (SNSPD), the current-voltage (I-V) characteristics of SNSPDs are extensively studied. Using a quasi-constant-voltage bias, the SNSPD nonlatching property is observed in the low voltage range. When the bias current surpasses the critical current, a thermal relaxation oscillation occurs because of the hotspot's periodic appearance, growth, and disappearance. This produces a smooth transition in theI-Vcurve instead of latching. The oscillation frequency is proportional to the voltage of the SNSPD. A linear dependence of the oscillation frequency on the SNSPD voltage is derived from the circuit model of SNSPD electronics, which fits well with the experimental results. The kinetic inductance of the SNSPD is extracted from the fitting as the sole parameter. In the high-voltage range, theI-Vcurve is deduced from Skocpol, Beasley, and Tinkham's self-heating hotspot model, which is consistent with the experimental result. By measuring the return current, we obtained a heat transfer coefficient (α) of 0.7-2 × 105W · m2· K1between the nanowire and the substrate.

DOI
10.1109/tasc.2013.2238280

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By changing the bias scheme of a superconducting nanowire single photon detector (SNSPD), the current-voltage (I-V) characteristics of SNSPDs are extensively studied. Using a quasi-constant-voltage bias, the SNSPD nonlatching property is observed in the low voltage range. When the bias current surpasses the critical current, a thermal relaxation oscillation occurs because of the hotspot's periodic appearance, growth, and disappearance. This produces a smooth transition in theI-Vcurve instead of latching. The oscillation frequency is proportional to the voltage of the SNSPD. A linear dependence of the oscillation frequency on the SNSPD voltage is derived from the circuit model of SNSPD electronics, which fits well with the experimental results. The kinetic inductance of the SNSPD is extracted from the fitting as the sole parameter. In the high-voltage range, theI-Vcurve is deduced from Skocpol, Beasley, and Tinkham's self-heating hotspot model, which is consistent with the experimental result. By measuring the return current, we obtained a heat transfer coefficient (α) of 0.7-2 × 105W · m2· K1between the nanowire and the substrate.
Latching is a serious issue in superconducting nanowire single-photon detector (SNSPD) technology. By extensively studying the electrical transportation characteristics of SNSPD with different bias schemes, we conclude that latching is a result of the improper bias to SNSPD. With the quasi-constant-voltage bias scheme, the intrinsic nonlatching nature of SNSPD is observed and discussed. The SNSPD working in the nonlatching bias shows a smaller jitter and a higher pulse amplitude than that in the previous anti-latching method. The quantum efficiency of SNSPD with the pulsed photon frequency up to 3 GHz is measured successfully, which further proves the nonlatching operation of SNSPD.
We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.
Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, IB × Zload, where Zload is limited to 50 Ω in standard r.f. electronics. Here, we break this limit by interfacing the 50 Ω load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. At the expense of reduced maximum counting rate, it increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, we experimentally observed a 3.6× higher pulse amplitude, 3.7× faster slew rate, and 25.1 ps smaller timing jitter. The results match our numerical simulation, which incorporates both the hotspot dynamics in the SNSPD and the distributed nature in the transmission line taper. The taper studied here may become a useful tool to interface high-impedance superconducting nanowire devices to conventional low-impedance circuits.
To analyze the switching dynamics and output performance of a superconducting nanowire single photon detector (SNSPD), the nanowire is usually modelled as an inductor in series with a time-varying resistor induced by the absorption of a photon. Our recent experimental results show that, due to the effect of kinetic inductance, for a SNSPD made of a nanowire of sufficient length, its geometrical length can be comparable to or even longer than the effective wavelength of frequencies contained in the output pulse. In other words, a superconducting nanowire can behave as a distributed transmission line so that the readout pulse depends on the photon detection location and the transmission line properties of the nanowire. Here, we develop a distributed model for a superconducting nanowire and apply it to simulate the output performance of a long nanowire designed into a coplanar waveguide. We compare this coplanar waveguide geometry to a conventional meander nanowire geometry. The simulation results agree well with our experimental observations. With this distributed model, we discuss the importance of microwave design of a nanowire and how impedance matching can affect the output pulse shape. We also discuss how the distributed model affects the growth and decay of the photon-triggered resistive hotspot.
© 2018 Author(s). To analyze the switching dynamics and output performance of a superconducting nanowire single photon detector (SNSPD), the nanowire is usually modelled as an inductor in series with a time-varying resistor induced by the absorption of a photon. Our recent experimental results show that, due to the effect of kinetic inductance, for a SNSPD made of a nanowire of sufficient length, its geometrical length can be comparable to or even longer than the effective wavelength of frequencies contained in the output pulse. In other words, a superconducting nanowire can behave as a distributed transmission line so that the readout pulse depends on the photon detection location and the transmission line properties of the nanowire. Here, we develop a distributed model for a superconducting nanowire and apply it to simulate the output performance of a long nanowire designed into a coplanar waveguide. We compare this coplanar waveguide geometry to a conventional meander nanowire geometry. The simulation results agree well with our experimental observations. With this distributed model, we discuss the importance of microwave design of a nanowire and how impedance matching can affect the output pulse shape. We also discuss how the distributed model affects the growth and decay of the photon-triggered resistive hotspot.
Today Superconducting Nanowire Single-Photon Detectors (SNSPDs) are commonly used in different photon-starved applications, including testing and diagnostics of VLSI circuits. Detecting very faint signals in the near-infrared wavelength range requires not only good detection efficiency, but also very low Dark Count Rate (DCR) and jitter. For example, low noise is crucial to enable ultra-low voltage optical testing of integrated circuits. The effect of detector temperature and background thermal radiation on the noise of superconducting single-photon detectors made of NbN meanders is studied in this paper. It is shown that two different regimes can be identified in the DCR vs. bias current characteristics. At high bias, the dark count rate is dominated by the intrinsic noise of the detector, while at low bias current it is dominated by the detection of stray photons that get onto the SNSPD. Changing the detector temperature changes its switching current and only affects the high bias branch of the characteristics: a reduction of the DCR can be achieved by lowering the SNSPD base temperature. On the other hand, changing the temperature of the single-photon light source (e.g. the VLSI circuit under test) only affects the low bias regime: a lower target temperature leads to a smaller DCR.