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Optics Communications

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

Haichao Zhang, Lin Wei-Zhu, Yuzhu Wang

Published Oct 24, 2004• 1 citation
Publisher
DOI
10.1016/j.optcom.2004.10.018

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The coherent spin dynamics of resident carriers, electrons, and holes in semiconductor nanostructures is studied theoretically under the conditions of periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed. Accumulation of the spin polarization is manifested either as resonant spin amplification or as mode locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.
We present an approach to spin dynamics by extending the optical Bloch equations for the driven two-level system to derive microscopic expressions for the transverse and longitudinal spin-relaxation times. This is done for the six-level system of electron and hole subband states in a semiconductor or a semiconductor quantum structure to account for the degrees of freedom of the carrier spin and the polarization of the exciting light and includes the scattering between carriers and lattice vibrations on a microscopic level. For the subsystem of the spin-split electron subbands we treat the electron-phonon interaction in second order and derive a set of equations of motion for the $2\ifmmode\times\else\texttimes\fi{}2$ spin-density matrix, which describes the electron spin dynamics and contains microscopic expressions for the longitudinal (T1)({T}_{1})(T1​) and transverse (T2)({T}_{2})(T2​) spin-relaxation times. Their meaning will be discussed in relation to experimental investigations of these quantities.