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Quantum Electronics and Laser Science Conference

Excitonic correlations in nonlinear phase shift in semiconductor quantum wells

Ryu Takayama, N. H. Kwong, I. Rumyantsev, Makoto Kuwata‐Gonokami, Rolf H. Binder

Published Nov 13, 2002• 0 citations
Publisher

Abstract

Summary form only given. The nonlinear optics near the fundamental absorption edge is commonly formulated in terms of a limited number of material parameters characterizing the strength of specific nonlinear processes. Once the nonlinear response function underlying these material parameters is known, one can optimize the relevant nonlinear optical effect for specific device applications. This study is focused on optical nonlinearities at quasi-resonant conditions in the picosecond-pulse regime, where excitonic correlations, such as biexcitonic resonances, contribute prominently to the physical processes. Using a microscopic theory, we have calculated systematically the parameter dependencies of some representative figures of merit, nonlinear phase shift /spl Delta//spl phi/ and differential transmissivity AT, which provide complementary information on the nonlinear susceptibility-/spl chi//sup (3)/:/spl Delta//spl phi//spl sim/Re/spl chi//sup (3)/, /spl Delta/T/spl sim/Im/spl chi//sup (3)/, approximately. We will show in detail how the various aspects of excitonic dynamics affect these quantities around the exciton resonance.

DOI
10.1109/qels.2001.961967

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Summary form only given. The nonlinear optics near the fundamental absorption edge is commonly formulated in terms of a limited number of material parameters characterizing the strength of specific nonlinear processes. Once the nonlinear response function underlying these material parameters is known, one can optimize the relevant nonlinear optical effect for specific device applications. This study is focused on optical nonlinearities at quasi-resonant conditions in the picosecond-pulse regime, where excitonic correlations, such as biexcitonic resonances, contribute prominently to the physical processes. Using a microscopic theory, we have calculated systematically the parameter dependencies of some representative figures of merit, nonlinear phase shift /spl Delta//spl phi/ and differential transmissivity AT, which provide complementary information on the nonlinear susceptibility-/spl chi//sup (3)/:/spl Delta//spl phi//spl sim/Re/spl chi//sup (3)/, /spl Delta/T/spl sim/Im/spl chi//sup (3)/, approximately. We will show in detail how the various aspects of excitonic dynamics affect these quantities around the exciton resonance.
A detailed numerical study of the third-order nonlinear optical susceptibilities (χ(3)) of semiconductor quantum wells is presented. The dependence of χ(3) on material parameters (electron-hole mass ratio and exciton linewidths), on the light polarization configuration (co- and countercircularly polarized) and on the spectral configuration is discussed. The goal of this study is to map out the nonlinear phase shift per quantum well and a related figure of merit caused by quasi-resonant excitonic and biexcitonic nonlinearities induced by picosecond light pulses. The study is based on the dynamics-controlled truncation formalism and evaluated under the assumption that only 1s-heavy-hole excitons contribute to the nonlinearities. It includes all correlation effects (exciton–exciton scattering in the singlet and triplet channels and coherent biexciton formation in the singlet channel) that contribute within the coherent excitonic χ(3) regime.
The study of the nonlinear optical response of excitons in semiconductors is important for both scientific and technological applications. Although the nonlinear optical properties of bulk semiconductors and heterostructures have been studied for almost three decades, with most of the research focusing on heterostructures, the mechanisms leading to the nonlinearities in these systems are not completely understood. Determining these mechanisms and developing a theoretical picture which describes the most dominant effects remains a challenge and an active area of study. Although optical interactions in semiconductors is a genuine many-body problem, a description of this system similar to the optical Bloch equations used in atomic studies has shown some success, but more work is needed to make this model complete. Experimental work, particularly in the bulk system uncomplicated by the interface disorder present in heterostructures, will provide the guidance to extend this formalism. In this dissertation, the frequency domain resonant nonlinear optical response of excitons in bulk gallium arsenide at low density is studied to gain insight into the dominant mechanisms leading to the response, as well as the dynamics of the nominally three-dimensional excitonic system. Specifically, the nonlinear response was probed with differential transmission (DT) and four-wave mixing (FWM) experiments, which measure to lowest order the third-order susceptibility, $\chi\sp{(3)}.$ Using these various tools, three specific areas were studied and the results will be presented. First, the role of the biexciton, the state of two bound excitons, in determining the bulk nonlinear response was explored. The observation of a red-shifted nonlinear resonance suggests the importance of this state at moderate densities. Second, a new response, characterized by a resonant increase in exciton absorption induced by optical pumping with initial superlinear growth and a transition to behavior described by simple line broadening with increased pump intensity, was studied in detail. A model considering increased polariton absorption with increased exciton-exciton interactions explains these effects. Finally, nonlinear optical spectroscopy was used to study exciton transport, where near-ballistic behavior was revealed. The effect of exciton transport, thermalization and radiative recombination on the nonlinear optical response was explored.
Summary form only given. While the conceptual realization of "3-level effects" in semiconductors is usually based on one-particle states given by the band structure of the system, we propose the realization of "3-level effects" in semiconductors based on many-particle states. Specifically, we study the quantum coherences related to excitons and biexcitons. Our analysis is based on the dynamics-controlled trunction (DCT) formalism and includes quantum correlations and quantum coherences within the 3rd-order nonlinear optical response. Within the /spl chi//sup (3)/ regime, only one-pair (excitonic) and two-pair (two-exciton) quantum coherences occur. We restrict the analysis to 1s-hh and 1s-lh excitons which dominate the nonlinear response. Results are shown for ZnSe quantum wells.
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
Summary form only given. The ultrafast nonlinear optical response of semiconductor-microcavities (SMCs) in the nonperturbative regime is attracting growing interest for exploring fundamental light-matter interactions in many-particle quantum systems, as well as for the future implementations of ultrafast photonic devices. In spite of many investigations, the coherent dynamics of excitonic nonlinear-response in the nonperturbative regime has not been fully understood. Open questions are how strong exciton-cavity coupling affects exciton-exciton (X-X) interactions, and how in turn the X-X correlation influences the nonlinear response of SmCs. We investigate these open questions and show that the nonperturbative regime provides an unprecedented tool for investigating four-particle correlations.We start from the equations for the third order exciton polarization and cavity field describing quantum optical effects and coherent nonlinear optics in SMCs, perform the semiclassical factorization and include multiple scattering processes.
This dissertation addresses both fundamental aspects of Coulomb correlations in semiconductor quantum wells and more practical aspects of theoretical analysis of semiconductor optoelectronic devices. After introducing the subject, we present and evaluate a state-of-the-art theory of the third order coherent optical response of a semiconductor quantum well based on the Dynamics Controlled Truncation (DCT) scheme. Already in the third order (the so-called chi (3)) regime, semiconductors exhibit a number of many-body Coulomb correlation effects. Their manifestation in various multi-pulse experimental configurations, customarily used in ultrafast semiconductor spectroscopy, has been an important component of this thesis. Coherent optical effects in a semiconductor 3-band system based on the heavy-hole, light-hole and conduction bands were investigated. The quantum beats in the time-integrated differential transmission signal were analyzed and compared with experimental data obtained at the University of Iowa. Fundamental differences from corresponding quantum beats in atomic 3-level systems were found. Also, the analysis of experimental data (obtained at the University of Arizona) of the coupled heavy-hole-light-hole optical Stark shift revealed evidence of intervalence band coherences, an analog of Raman coherences in atomic 3-levels systems. A scheme for realization of electromagnetically-induced transparency (EIT) based on the interference of excitonic and biexcitonic coherences was proposed. Corresponding experiments performed at the University of Oregon showed indeed a considerable coherent reduction of excitonic absorption. Furthermore, an extension of the chi(3) analysis revealed an energy renormalization of the biexciton, in good agreement with the corresponding experiment. A microscopic analysis of polarization dynamics in time-resolved four-wave mixing signals was performed, revealing interesting implications for the biexciton dephasing in addition to the significance of many-body correlations. In the case of four-wave mixing in semiconductor microcavities, our theoretical analysis in conjunction with experimental data obtained at the University of Tokyo gave us indications for a significant shortcoming of the second Born approximation (2nd BA) applied to two-exciton Coulomb correlations in a thin semiconductor quantum well, in agreement with the general knowledge of the qualitative failure of the 2nd BA in systems with short-range interaction in two dimensions. We also analyzed a novel all-optical switching technique based on the nonlinear polarization rotation. Apart from identifying the many-particle processes relevant for the switch operation in the chi(3) regime, we proposed ways to further optimize the switch.