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The role of inhomogeneities in nanowire superconducting single-photon detectors

Kpm op 't Hoog

Published Jan 1, 2014• 0 citations
OpenAlex

Abstract

Nanowire superconducting single-photon detectors (SSPDs) are promising devices for single-photon detection applications at telecom wavelengths, in terms of high efficiency, low dark count rate and short dead time. They consist of a long, 100 nm wide, superconducting niobium nitride nanowire folded into a meander pattern and biased close to the critical current. Photons incident on the SSPD locally break the superconductivity which results in a resistive barrier across the nanowire. The voltage drop across this barrier is measured. The devices presented in this thesis are fabricated on a gallium arsenide substrate: a material system that allows integration of single-photon sources and detectors on a single chip. Such quantum photonic integrated circuits (QPICs) are of major importance for scalable quantum computing.Measurements on nominally identical SSPDs show large variations in critical current and efficiency of the devices . This is a huge problem for applications where arrays of SSPDs are needed such as linear optical quantum computing. The authors of [1] attribute the observations to geometrical constrictions: regions in the nanowire where the cross section is reduced. This reduces the critical current of the wire and the SSPD cannot be biased efficiently anymore. In this thesis, it is shown that the continuously distributed inhomogeneity of the nanowire dimension or the crystal structure, instead of localized constrictions, is the origin of the limited detection efficiency and poor uniformity of our SSPDs.To investigate the effect of inhomogeneities, SSPDs with lengths in the range from 100 nm to 15 µm are fabricated and characterized electrically and optically. The two main observations from the electrical characterization are a decrease of the critical current with increasing length and a decrease of the spread in critical current values with increasing length. These measurements also indicate that the length scale of the inhomogeneities is 100 nm or smaller. The main result of the optical characterization is a decrease of the detection efficiency with increasing wire length.Simple assumptions on how the inhomogeneities influence the critical current of the wires allowed us to create a numerical model that quantitatively reproduces the measured variations of the critical current. This result is used to model also the detection efficiency of the SSPDs. This model qualitatively reproduces the general trends in the efficiency measurements, although some deviations are observed for the longer wires. Nanowire superconducting single-photon detectors (SSPDs) are promising devices for single-photon detection applications at telecom wavelengths, in terms of high efficiency, low dark count rate and short dead time. They consist of a long, 100 nm wide, superconducting niobium nitride nanowire folded into a meander pattern and biased close to the critical current. Photons incident on the SSPD locally break the superconductivity which results in a resistive barrier across the nanowire. The voltage drop across this barrier is measured. The devices presented in this thesis are fabricated on a gallium arsenide substrate: a material system that allows integration of single-photon sources and detectors on a single chip. Such quantum photonic integrated circuits (QPICs) are of major importance for scalable quantum computing.Measurements on nominally identical SSPDs show large variations in critical current and efficiency of the devices . This is a huge problem for applications where arrays of SSPDs are needed such as linear optical quantum computing. The authors of [1] attribute the observations to geometrical constrictions: regions in the nanowire where the cross section is reduced. This reduces the critical current of the wire and the SSPD cannot be biased efficiently anymore. In this thesis, it is shown that the continuously distributed inhomogeneity of the nanowire dimension or the crystal structure, instead of localized constrictions, is the origin of the limited detection efficiency and poor uniformity of our SSPDs.To investigate the effect of inhomogeneities, SSPDs with lengths in the range from 100 nm to 15 µm are fabricated and characterized electrically and optically. The two main observations from the electrical characterization are a decrease of the critical current with increasing length and a decrease of the spread in critical current values with increasing length. These measurements also indicate that the length scale of the inhomogeneities is 100 nm or smaller. The main result of the optical characterization is a decrease of the detection efficiency with increasing wire length.Simple assumptions on how the inhomogeneities influence the critical current of the wires allowed us to create a numerical model that quantitatively reproduces the measured variations of the critical current. This result is used to model also the detection efficiency of the SSPDs. This model qualitatively reproduces the general trends in the efficiency measurements, although some deviations are observed for the longer wires.

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Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (jitter of 20 ps full width at half maximum, FWHM). They can be operated at temperatures near 4 K, so they can be packaged in cryogenic dipsticks or cryogen-free refrigerators. These features make SSPDs the most promising detectors for telecom-wavelength single-photon counting applications. The basic structure of an SSPD is a narrow (w=50 to 120 nm), thin (th∼4-10 nm) NbN superconducting nanowire folded in a meander pattern. The typical detector active area (i.e. the size of the pixel) is Ad=10 × 10 µm2 (which allows an efficient coupling with the core of optical fibers at telecom wavelengths) with filling factor (f, the ratio of the area occupied by the superconducting meander to the device total area) ranging from 40% to 60%. The meanders are embedded in a 50 Ω coplanar transmission line. At present, the SSPD detection efficiency is limited by its absorbance (α, the ratio of the number of photons absorbed in the nanowire to the number of incident photons on the device active area). Indeed, it has been shown that in the classic front-illumination configuration α cannot exceed 30%. Our approach to increase α consists in integrating SSPDs with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires to transfer the challenging SSPD technology (i.e. the deposition of high-quality few-nm thick NbN films and the nano-patterning by electron beam lithography, EBL) from the usual comfortable substrates, i.e. sapphire and MgO, which are known to allow the deposition of few-nm thick NbN films of excellent quality, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Our first task was then to optimize a process for the deposition of high-quality few-nm thick NbN films on GaAs and AlAs/GaAs-based DBRs. Because of the requirement of compatibility with GaAs, the substrate temperature used for the depositions is 400°C, in order to prevent As evaporation. As GaAs and DBRs are highly mismatched substrates, the deposition parameters were first optimized with respect to the superconducting properties of NbN films on MgO substrates, which allow the growth of high crystal quality NbN films at low temperature. This made easier to separate the influence of stoichiometry from that of microstructure. The optimized deposition parameters were then used to grow NbN films on GaAs and DBRs, under the reasonable assumption (later checked and confirmed) that changing the substrate would not produce a change in film stoichiometry, but only in its microstructure. NbN films ranging from 150nm to 3nm in thickness were then deposited on epitaxial-quality single crystal MgO, GaAs and DBRs structures. The deposition technique is the current controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar + N2 plasma. NbN films deposited on MgO exhibit superconducting critical temperature ΤC=10 Κ, superconducting transition width ΔΤC=0.8 Κ and residual resistivity ratio RRR=R(20K)/R(300K)=0.8 for th=4 nm, which are state of the art values, proof of the excellent quality of our low-temperature deposition process. The quality of films deposited on GaAs and on DBRs is lower than that of NbN deposited on MgO, as for any thickness they systematically exhibit higher ΔΤC and lower ΤC and RRR. However, 5.5 nm-thick NbN films on GaAs still exhibit ΤC=10.7 Κ, ΔΤC=1.1 Κ and RRR=0.7, which compares with 4.5 nm thick films on MgO, making them suitable for device fabrication. To our knowledge, the growth of such high quality thin NbN films on GaAs and DBRs, has never been reported in literature. The degradation of the superconducting properties exhibited by NbN films on GaAs and DBRs was attributed to a highly defected microstructure, due both to a higher lattice misfit between NbN and GaAs and to a poorer quality of the substrate surface. Encouraging preliminary results show that the quality of these films can be improved either cleaning the GaAs/DBR substrate surface more effectively or adding an MgO buffer layer. SSPDs were fabricated on thin NbN films (th=3-7 nm) deposited under optimal conditions on MgO and GaAs by EBL and reactive ion etching. The geometrical parameters of our detectors are: Ad=5×5 µm2, w=60-200 nm, f=40%-60%. The devices were then characterized both electrically and optically. I-V curves of test structures were measured, from which it was possible to deduce important physical parameters used as figures of merit to estimate the superconducting properties of the nanowires, or for the design and the simulation of the devices. The quality of the devices fabricated on GaAs is poorer than those on MgO, most likely due to the lower quality of NbN films deposited on GaAs and to issues related to the EBL nano-patterning step. Measurements of η and of DK as a function of the bias current were performed on SSPDs fabricated on MgO and GaAs. The best performance was exhibited by a w=100 nm, f=40%, th=4 nm meander, showing η=20% and noise equivalent power NEP=10-16 W/Hz1/2 (at λ=1.3 µm and T=4.2 K), which are state of the art values. This result showed for the first time that high performance NbN SSPDs can be realized on a different substrate and from a deposition process at lower temperature than previously reported. 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Two types of inhomogeneities were evidenced, corresponding to localized efficiency dips and peaks. The peaks likely correspond to constrictions. SEM observations did not evidence any width narrowing at the position of the efficiency peaks, which suggests that constrictions might be due to thickness or quality inhomogeneities of the film occurring during the film deposition or later in the process. On the other hand, the efficiency dips have been correlated with lithography problems discovered on SEM images. Finally, a new photon number resolving detector, the Parallel Nanowire Detector (PND), has been demonstrated, which significantly outperforms existing approaches in terms of sensitivity, speed and multiplication noise in the telecommunication wavelength range. 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Superconducting nanowire avalanche photodetectors

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Superconducting devices offer the potential to perform at speeds and detection efficiencies higher than what is possible using conventional technologies (such as semiconducting avalanche photodiodes and photomultiplier tubs) for wavelengths from the ultraviolet to the mid-infrared. As a result, there has been increasing interest in using superconducting optical photon detectors in a variety of applications. There has been significant progress in using these types of detectors in areas of basic research such as quantum information science and quantum optics. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will begin by describing some of our earlier work on superconducting Transition-Edge Sensor (TES). In particular, I will describe some of the engineering involved in the cryogenic, electrical, and optical packaging so that these devices can be easily coupled into fiber-based optics. I will also describe our recent work on developing superconducting nanowire single photon detectors (SNSPD or SSPD). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. We will describe to construct systems using tungsten-silicide nanowires to achieve high detection efficiency (>90% at 1550nm). I will also describe our work to improve the performance of the device by fabricating multiple nanowires in an electrically parallel structure to implement a superconducting nanowire avalanche photodiode (SNAP)[1]. One example of this type of detector is shown in Fig 1. In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[2]. In addition, progress on other types of SNAP detectors will be described to increase the signal size from a single photon, reduce the recovery time of the device, and to improve the jitter.

IEEE Photonics Conference•Sep 1, 2013•3 citations
Nanowire superconducting single-photon detectors (SSPDs) are promising devices for single-photon detection applications at telecom wavelengths, in terms of high efficiency, low dark count rate and short dead time. They consist of a long, 100 nm wide, superconducting niobium nitride nanowire folded into a meander pattern and biased close to the critical current. Photons incident on the SSPD locally break the superconductivity which results in a resistive barrier across the nanowire. The voltage drop across this barrier is measured. The devices presented in this thesis are fabricated on a gallium arsenide substrate: a material system that allows integration of single-photon sources and detectors on a single chip. Such quantum photonic integrated circuits (QPICs) are of major importance for scalable quantum computing.Measurements on nominally identical SSPDs show large variations in critical current and efficiency of the devices . This is a huge problem for applications where arrays of SSPDs are needed such as linear optical quantum computing. The authors of [1] attribute the observations to geometrical constrictions: regions in the nanowire where the cross section is reduced. This reduces the critical current of the wire and the SSPD cannot be biased efficiently anymore. In this thesis, it is shown that the continuously distributed inhomogeneity of the nanowire dimension or the crystal structure, instead of localized constrictions, is the origin of the limited detection efficiency and poor uniformity of our SSPDs.To investigate the effect of inhomogeneities, SSPDs with lengths in the range from 100 nm to 15 µm are fabricated and characterized electrically and optically. The two main observations from the electrical characterization are a decrease of the critical current with increasing length and a decrease of the spread in critical current values with increasing length. These measurements also indicate that the length scale of the inhomogeneities is 100 nm or smaller. The main result of the optical characterization is a decrease of the detection efficiency with increasing wire length.Simple assumptions on how the inhomogeneities influence the critical current of the wires allowed us to create a numerical model that quantitatively reproduces the measured variations of the critical current. This result is used to model also the detection efficiency of the SSPDs. This model qualitatively reproduces the general trends in the efficiency measurements, although some deviations are observed for the longer wires. Nanowire superconducting single-photon detectors (SSPDs) are promising devices for single-photon detection applications at telecom wavelengths, in terms of high efficiency, low dark count rate and short dead time. They consist of a long, 100 nm wide, superconducting niobium nitride nanowire folded into a meander pattern and biased close to the critical current. Photons incident on the SSPD locally break the superconductivity which results in a resistive barrier across the nanowire. The voltage drop across this barrier is measured. The devices presented in this thesis are fabricated on a gallium arsenide substrate: a material system that allows integration of single-photon sources and detectors on a single chip. Such quantum photonic integrated circuits (QPICs) are of major importance for scalable quantum computing.Measurements on nominally identical SSPDs show large variations in critical current and efficiency of the devices . This is a huge problem for applications where arrays of SSPDs are needed such as linear optical quantum computing. The authors of [1] attribute the observations to geometrical constrictions: regions in the nanowire where the cross section is reduced. This reduces the critical current of the wire and the SSPD cannot be biased efficiently anymore. In this thesis, it is shown that the continuously distributed inhomogeneity of the nanowire dimension or the crystal structure, instead of localized constrictions, is the origin of the limited detection efficiency and poor uniformity of our SSPDs.To investigate the effect of inhomogeneities, SSPDs with lengths in the range from 100 nm to 15 µm are fabricated and characterized electrically and optically. The two main observations from the electrical characterization are a decrease of the critical current with increasing length and a decrease of the spread in critical current values with increasing length. These measurements also indicate that the length scale of the inhomogeneities is 100 nm or smaller. The main result of the optical characterization is a decrease of the detection efficiency with increasing wire length.Simple assumptions on how the inhomogeneities influence the critical current of the wires allowed us to create a numerical model that quantitatively reproduces the measured variations of the critical current. This result is used to model also the detection efficiency of the SSPDs. This model qualitatively reproduces the general trends in the efficiency measurements, although some deviations are observed for the longer wires.
Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (jitter of 20 ps full width at half maximum, FWHM). They can be operated at temperatures near 4 K, so they can be packaged in cryogenic dipsticks or cryogen-free refrigerators. These features make SSPDs the most promising detectors for telecom-wavelength single-photon counting applications. The basic structure of an SSPD is a narrow (w=50 to 120 nm), thin (th∼4-10 nm) NbN superconducting nanowire folded in a meander pattern. The typical detector active area (i.e. the size of the pixel) is Ad=10 × 10 µm2 (which allows an efficient coupling with the core of optical fibers at telecom wavelengths) with filling factor (f, the ratio of the area occupied by the superconducting meander to the device total area) ranging from 40% to 60%. The meanders are embedded in a 50 Ω coplanar transmission line. At present, the SSPD detection efficiency is limited by its absorbance (α, the ratio of the number of photons absorbed in the nanowire to the number of incident photons on the device active area). Indeed, it has been shown that in the classic front-illumination configuration α cannot exceed 30%. Our approach to increase α consists in integrating SSPDs with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires to transfer the challenging SSPD technology (i.e. the deposition of high-quality few-nm thick NbN films and the nano-patterning by electron beam lithography, EBL) from the usual comfortable substrates, i.e. sapphire and MgO, which are known to allow the deposition of few-nm thick NbN films of excellent quality, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Our first task was then to optimize a process for the deposition of high-quality few-nm thick NbN films on GaAs and AlAs/GaAs-based DBRs. Because of the requirement of compatibility with GaAs, the substrate temperature used for the depositions is 400°C, in order to prevent As evaporation. As GaAs and DBRs are highly mismatched substrates, the deposition parameters were first optimized with respect to the superconducting properties of NbN films on MgO substrates, which allow the growth of high crystal quality NbN films at low temperature. This made easier to separate the influence of stoichiometry from that of microstructure. The optimized deposition parameters were then used to grow NbN films on GaAs and DBRs, under the reasonable assumption (later checked and confirmed) that changing the substrate would not produce a change in film stoichiometry, but only in its microstructure. NbN films ranging from 150nm to 3nm in thickness were then deposited on epitaxial-quality single crystal MgO, GaAs and DBRs structures. The deposition technique is the current controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar + N2 plasma. NbN films deposited on MgO exhibit superconducting critical temperature ΤC=10 Κ, superconducting transition width ΔΤC=0.8 Κ and residual resistivity ratio RRR=R(20K)/R(300K)=0.8 for th=4 nm, which are state of the art values, proof of the excellent quality of our low-temperature deposition process. The quality of films deposited on GaAs and on DBRs is lower than that of NbN deposited on MgO, as for any thickness they systematically exhibit higher ΔΤC and lower ΤC and RRR. However, 5.5 nm-thick NbN films on GaAs still exhibit ΤC=10.7 Κ, ΔΤC=1.1 Κ and RRR=0.7, which compares with 4.5 nm thick films on MgO, making them suitable for device fabrication. To our knowledge, the growth of such high quality thin NbN films on GaAs and DBRs, has never been reported in literature. The degradation of the superconducting properties exhibited by NbN films on GaAs and DBRs was attributed to a highly defected microstructure, due both to a higher lattice misfit between NbN and GaAs and to a poorer quality of the substrate surface. Encouraging preliminary results show that the quality of these films can be improved either cleaning the GaAs/DBR substrate surface more effectively or adding an MgO buffer layer. SSPDs were fabricated on thin NbN films (th=3-7 nm) deposited under optimal conditions on MgO and GaAs by EBL and reactive ion etching. The geometrical parameters of our detectors are: Ad=5×5 µm2, w=60-200 nm, f=40%-60%. The devices were then characterized both electrically and optically. I-V curves of test structures were measured, from which it was possible to deduce important physical parameters used as figures of merit to estimate the superconducting properties of the nanowires, or for the design and the simulation of the devices. The quality of the devices fabricated on GaAs is poorer than those on MgO, most likely due to the lower quality of NbN films deposited on GaAs and to issues related to the EBL nano-patterning step. Measurements of η and of DK as a function of the bias current were performed on SSPDs fabricated on MgO and GaAs. The best performance was exhibited by a w=100 nm, f=40%, th=4 nm meander, showing η=20% and noise equivalent power NEP=10-16 W/Hz1/2 (at λ=1.3 µm and T=4.2 K), which are state of the art values. This result showed for the first time that high performance NbN SSPDs can be realized on a different substrate and from a deposition process at lower temperature than previously reported. High detection efficiencies could not be measured with SSPDs fabricated on GaAs, but it should be noted that at present only first-generation devices (fabricated on GaAs substrates of poor surface quality) have been tested. Better results are expected from devices fabricated on the improved NbN films grown on clean or MgO-buffered GaAs substrates. Although SSPDs on MgO have shown high detection efficiency, the fabrication yield of high performance detectors has to be improved. Variations of the critical current along a nanowire are responsible for the wide distribution in efficiency values of nominally identical SSPDs. In order to understand the physical origin of the nanowire constrictions (i.e. regions of suppressed superconductivity) we performed a spatially-resolved characterization of η of a long straight nanowire, followed by a high resolution SEM (scanning electron microscope) scan on its whole length. Two types of inhomogeneities were evidenced, corresponding to localized efficiency dips and peaks. The peaks likely correspond to constrictions. SEM observations did not evidence any width narrowing at the position of the efficiency peaks, which suggests that constrictions might be due to thickness or quality inhomogeneities of the film occurring during the film deposition or later in the process. On the other hand, the efficiency dips have been correlated with lithography problems discovered on SEM images. Finally, a new photon number resolving detector, the Parallel Nanowire Detector (PND), has been demonstrated, which significantly outperforms existing approaches in terms of sensitivity, speed and multiplication noise in the telecommunication wavelength range. In particular, it provides a repetition rate (80 MHz) three orders of magnitude larger than any existing detector at telecom wavelength, and a sensitivity (NEP=4.2×10-18 W/Hz1/2) one-two orders of magnitude better, with the exception of transition-edge sensors (which require a much lower operating temperature). An electrical equivalent model of the device was developed in order to study its operation. The modeling predicts a physical limit to the reset time of the PND, which is lower than initially estimated. Furthermore, the figures of merit of the device performance in terms of efficiency, speed and sensitivity were defined and their dependency on the design parameters analyzed. Additionally, we developed modeling tools to fully characterize the device and an algorithm to estimate the photon number statistics of an unknown light using the PND. The reconstruction proved to be successful only for low photon fluxes, most likely due to the limited counting capability and the poor calibration of the detector. The PND, with its high repetition rate and high sensitivity, is then suitable for measuring an unknown photon number probability distribution assuming accurate calibration and sufficient counting capability. ______________________________[1] G. N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, Appl. Phys. Lett. 79, 705 (2001).
We investigate the source of the large variations in the observed detection efficiencies of superconducting nanowire single-photon detectors between many nominally identical devices. Through both electrical and optical measurements, we infer that these variations arise from “constrictions:” highly localized regions of the nanowires where the effective cross-sectional area for superconducting current is reduced. These constrictions limit the bias-current density to well below its critical value over the remainder of the wire, and thus prevent the detection efficiency from reaching the high values that occur in these devices when they are biased near the critical current density.
Nanowire superconducting single-photon detectors (SSPDs) consist of a superconducting wire of nanoscale cross-section [1], typically 4×100 nm2. A current close to the device critical current renders the nanowire sensitive to single photons. SSPDs are known for their high efficiency, low jitter, low dark count rate and fast reset time. An important challenge for future application of SSPDs is to extend the useful wavelength range towards the infrared without comprising detector speed or dark count rate. To this end, we explore optical designs with wider nanowires that utilize efficient detection of single photons at the edge of the nanowire. Silicon nanowires on top of a NbN nanowire increase both the calculated total absorption and the internal detection efficiency significantly compared to a standard meandering wire geometry.
Nanowire superconducting single photon detectors (SSPDs) consist of a thin (~ 4 to 6 nm) and narrow (~ 50 to 200 nm) superconducting wire biased close to the critical current. Operating conditions are such that the absorption of one or more photons locally transfers the detector to its normal state, which then results in a detectable electrical pulse. SSPDs are versatile detectors that operate in a wide wavelength range (from UV to mid-infrared) with almost negligible dark counts. They are typically shaped in the form of a meander to cover a sizeable fraction of a sufficiently large 2D surface, but other shapes have also been produced and are often easier to analyse. Until recently, the working principle of SSPDs was badly understood and several competing theory were formulated.
A superconducting thin film with uniform properties is the key to realize nanowire superconducting single-photon detectors (SSPDs) with high performance and high yield. To investigate the uniformity of NbN films, we introduce and characterize simple detectors consisting of short nanowires with length ranging from 100nm to 15μm. Our nanowires, contrary to meander SSPDs, allow probing the homogeneity of NbN at the nanoscale. Experimental results, endorsed by a microscopic model, show the strongly inhomogeneous nature of NbN films on the sub-100nm scale.
Superconducting devices offer the potential to perform at speeds and detection efficiencies higher than what is possible using conventional technologies (such as semiconducting avalanche photodiodes and photomultiplier tubs) for wavelengths from the ultraviolet to the mid-infrared. As a result, there has been increasing interest in using superconducting optical photon detectors in a variety of applications. There has been significant progress in using these types of detectors in areas of basic research such as quantum information science and quantum optics. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will begin by describing some of our earlier work on superconducting Transition-Edge Sensor (TES). In particular, I will describe some of the engineering involved in the cryogenic, electrical, and optical packaging so that these devices can be easily coupled into fiber-based optics. I will also describe our recent work on developing superconducting nanowire single photon detectors (SNSPD or SSPD). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. We will describe to construct systems using tungsten-silicide nanowires to achieve high detection efficiency (>90% at 1550nm). I will also describe our work to improve the performance of the device by fabricating multiple nanowires in an electrically parallel structure to implement a superconducting nanowire avalanche photodiode (SNAP)[1]. One example of this type of detector is shown in Fig 1. In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[2]. In addition, progress on other types of SNAP detectors will be described to increase the signal size from a single photon, reduce the recovery time of the device, and to improve the jitter.