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Optics Express

Power and wavelength polarization bistability with very wide hysteresis cycles in a 1550nm-VCSEL subject to orthogonal optical injection

Antonio Hurtado, Ana Quirce, Angel Valle A, Luis Pesquera, M.J. Adams

Published Dec 10, 2009• 42 citations
Publisher

Abstract

We have measured optical power and wavelength polarization bistability in a 1550 nm-Vertical Cavity Surface-Emitting Laser (VCSEL) subject to orthogonally-polarized optical injection into the orthogonal polarization of the fundamental transverse mode. Optical bistability with very wide hysteresis cycles, up to four times wider than previously reported results has been measured for both the optical power and wavelength domain. We also report the experimental observation of three different shapes of polarization bistability, anticlockwise, clockwise and X-Shape bistability, all of them with wide hysteresis cycles. This rich variety of behaviour at the important wavelength of 1550 nm offers promise for the use of VCSELs for all-optical signal processing and optical switching/routing applications.

DOI
10.1364/oe.17.023637

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We have measured optical power and wavelength polarization bistability in a 1550 nm-Vertical Cavity Surface-Emitting Laser (VCSEL) subject to orthogonally-polarized optical injection into the orthogonal polarization of the fundamental transverse mode. Optical bistability with very wide hysteresis cycles, up to four times wider than previously reported results has been measured for both the optical power and wavelength domain. We also report the experimental observation of three different shapes of polarization bistability, anticlockwise, clockwise and X-Shape bistability, all of them with wide hysteresis cycles. This rich variety of behaviour at the important wavelength of 1550 nm offers promise for the use of VCSELs for all-optical signal processing and optical switching/routing applications.
Experimental observation of Optical Bistability (OB) and nonlinear gain is reported in a 1550-nm Vertical Cavity Semiconductor Optical Amplifier (VCSOA) under parallel and orthogonal polarized optical injection into the two orthogonal polarizations of the fundamental mode. Different nonlinear switching mechanisms, including anticlockwise and clockwise nonlinear gain and bistability, have been found when the polarization of the externally injected signal matches that of the injected mode, whilst a linear response is measured when the polarization is orthogonal to that of the mode under injection. This diversity of behavior with input polarization offers promise for the potential use of VCSOAs for all-optical signal processing and all-optical switching/routing applications.
We report experimental measurements of Optical Bistability (OB) and nonlinear switching in a 1550 nm-Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection and biased below and above its threshold current. Two different types of OB and nonlinear switching, anticlockwise and clockwise, have been observed in both the optical power and wavelength domain. The influence of important parameters including the bias current, the initial wavelength detuning and the optical input power has also been studied. The existence of diverse forms of OB and nonlinear switching in a VCSOA operated in reflection opens the door for the development of inverting and non-inverting logic gates, using, respectively, the anticlockwise or the clockwise nonlinear switching transitions appearing in the VCSOA under external optical injection.
Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on theQfactor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with aQfactor as low as 500 was shown.
In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wavelength detuning in a single mode Fabry—Pérot laser diode (SMFP-LD). Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops: counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hysteresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from −7 dBm to −5 dBm.
Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.