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Applied Optics

Theory of the basic optoelectronic behavior of a tunnel diode

Gabriel Moagăr‐Poladian

Published Nov 20, 2001• 1 citation
Publisher

Abstract

The basic behavior of a tunnel diode when it is used as an optoelectronic device is presented. It is shown that a tunnel diode can be used as an electro-optic modulator, as a device that exhibits self-induced transparency, or as a wavelength converter (for both upconversion and downconversion). The tunnel diode has optical bistability even if it is not placed inside a Fabry-Perot resonator. Numerical estimations are made for some of the parameters of interest for an optoelectronic device and are compared with those of other existing semiconductor-based optoelectronic devices. As the numerical estimates show, a tunnel diode can be a highly efficient optoelectronic device with an extremely wide area of application.

DOI
10.1364/ao.40.006086

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The basic behavior of a tunnel diode when it is used as an optoelectronic device is presented. It is shown that a tunnel diode can be used as an electro-optic modulator, as a device that exhibits self-induced transparency, or as a wavelength converter (for both upconversion and downconversion). The tunnel diode has optical bistability even if it is not placed inside a Fabry-Perot resonator. Numerical estimations are made for some of the parameters of interest for an optoelectronic device and are compared with those of other existing semiconductor-based optoelectronic devices. As the numerical estimates show, a tunnel diode can be a highly efficient optoelectronic device with an extremely wide area of application.
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Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory including the full electron-electron interaction. The transition from the quantum confined Stark effect, which is found for well widths smaller than the exciton Bohr diameter, to the Franz-Keldysh effect, which corresponds to the limit of wide wells, is studied. Optical bistability and switching is found in R-SEED and D-SEED configurations, and the optimization of the device performance is discussed.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
This article describes the application of one type of optical bistable device based on gallium arsenide as the nonlinear medium. The authors discuss several possible operations with GaAs nonlinear Fabry-Perot etalons. This article utilizes a recently developed computer model to illustrate the basic operating principles and applications. The authors mainly concentrate on the device operation itself. In keeping with common practice they use the term optical bistable device when referring to a device that can exhibit optical bistability even when not being used in such a manner. Instead of the expression nonlinear Fabry-Perot etalon, they often use nonlinear etalons or etalon devices.
We propose a model for the optical transistor which can also be used for optical switching. We consider the ‘resonant optical tunnel effect’ and we show that the amplification of a modulation may be obtained by acting on the index of refraction of the intermediate nonlinear layer of a multilayer optical film. Parameters can be chosen in a technically possible range and we give a numerical estimation of these parameters when using CdS as amplifier. These results are compared with those which could be expected with a nonlinear Fabry-Perot.