Summary form only given: Amplification in rare-earth doped solid state planar optical structures has attracted a lot of interest in recent years due to the fact that the rare earth ions show sharp absorption and emission bands and relatively long luminescence lifetimes. In particular the erbium (Er) ion is very attractive because of its intra 4f-transition from the first excited state to the ground state around 1.53 mum (4I13/2-4I15/2). The main problem of the erbium doped waveguide amplifiers (EDWAs) is that high values of the Er3+concentration are required to reach high gain figures in a compact length, but in this way the concentration quenching effects become very considerable and detrimental to the optical gain, since they reduce the population in the first excited state. A good solution to overcome this dramatic drawback is to consider erbium doped photonic crystal amplifier (EDPCA). In fact the small group velocity of electromagnetic eigenmodes brings about the enhancement of stimulated emission if the photonic crystals are doped by active media as the rare earth ions E3+r or Yt3+. This phenomenon originates from the long interaction time between radiation field and the matter caused by the small group velocity near the edge of the photonic band gap. The efficient confinement of light is achievable not only by tuning the input signal at the band edge of the gap of the photonic crystal but it is also obtainable by introducing local defects inside photonic crystals. The density of electromagnetic states inside a cavity is significantly modified and the spontaneous emission of atoms in a cavity can be either enhanced or inhibited. Erbium doped silica-titania one-dimensional photonic crystal microcavities have been analyzed by solving the erbium rate equations and the Maxwell equations by means of an auxiliary differential equation finite difference time domain technique. Since the performance of optical amplifiers depends on the populations of the energy levels participating in radiative transitions, determined principally by the distribution and concentration of the rare-earth ions and by the pumping conditions, the relations between these parameters and the transmittance of the EDPCMA have been studied
Summary form only given: Amplification in rare-earth doped solid state planar optical structures has attracted a lot of interest in recent years due to the fact that the rare earth ions show sharp absorption and emission bands and relatively long luminescence lifetimes. In particular the erbium (Er) ion is very attractive because of its intra 4f-transition from the first excited state to the ground state around 1.53 mum (4I13/2-4I15/2). The main problem of the erbium doped waveguide amplifiers (EDWAs) is that high values of the Er3+concentration are required to reach high gain figures in a compact length, but in this way the concentration quenching effects become very considerable and detrimental to the optical gain, since they reduce the population in the first excited state. A good solution to overcome this dramatic drawback is to consider erbium doped photonic crystal amplifier (EDPCA). In fact the small group velocity of electromagnetic eigenmodes brings about the enhancement of stimulated emission if the photonic crystals are doped by active media as the rare earth ions E3+r or Yt3+. This phenomenon originates from the long interaction time between radiation field and the matter caused by the small group velocity near the edge of the photonic band gap. The efficient confinement of light is achievable not only by tuning the input signal at the band edge of the gap of the photonic crystal but it is also obtainable by introducing local defects inside photonic crystals. The density of electromagnetic states inside a cavity is significantly modified and the spontaneous emission of atoms in a cavity can be either enhanced or inhibited. Erbium doped silica-titania one-dimensional photonic crystal microcavities have been analyzed by solving the erbium rate equations and the Maxwell equations by means of an auxiliary differential equation finite difference time domain technique. Since the performance of optical amplifiers depends on the populations of the energy levels participating in radiative transitions, determined principally by the distribution and concentration of the rare-earth ions and by the pumping conditions, the relations between these parameters and the transmittance of the EDPCMA have been studied
Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.
Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is very small or abnormal. OCIS codes: 130.3120, 120.7000, 160.4670, 120.4570, 160.5690, 230.4170. More and more importance has been attached to the unique behaviors of electromagnetic wave propagating in photonic crystals, a novel and artificial photonic mate-
Atomic-like emitters in the solid state serve as important resources in the advancement of future quantum networks. In particular, intra-4f optical transitions of rare earth ions exhibit excellent coherence properties thanks to the shielding effect of outer electrons. Still, the presence of various dephasing channels in solid state hosts introduces additional decoherence beyond the radiative decay, causing the coherence time of most rare earth doped materials to be over an order of magnitude lower than the radiative limit. Such obstacle prevents the emission of indistinguishable photons from rare earth ions, which is an essential requirement for various quantum applications. In this work, we perform optical coherence study on erbium ions doped in thin-film lithium niobate by patterning photonic crystal resonators with quality factor around 100 k and sub-λ3 mode volume. Leveraging the combination of long coherence and strong Purcell enhancement in the cavity, we show that the coherence time measured with photon echo approaches the radiative limit (80%), representing a 50-fold improvement compared to the waveguide case. Our results present promising prospects toward utilizing rare earth doped materials as quantum repeaters and sources of indistinguishable photons.
Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.
Rare earth-activated 1-D photonic crystals were fabricated by RF-sputtering technique. The cavity is constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of ten pairs of SiO2/TiO2 layers. Scanning electron microscopy is employed to put in evidence the quality of the sample, the homogeneities of the layers thickness and the good adhesion among them. Near infrared transmittance and variable angle reflectance spectra confirm the presence of a stop band from 1500 nm to 2000 nm with a cavity resonance centered at 1749 nm at 0° and a quality factor of 890. The influence of the cavity on the ⁴I₁₃/₂ -->⁴I₁₅/₂ emission band of Er3+ ion is also demonstrated.
Optical phenomena in materials with a space modulation of dielectric constant at distances close to the light wavelengths (so called photonic band-gap structures or photonic crystals) are of a great interest now because of the existence of band gaps in their photonic band structure (Bykov, 1972; Yablonovitch, 1987; John, 1987). These band gaps represent frequency regions where electromagnetic waves are forbidden, irrespective of the spatial propagation directions. Inside the band gaps, the photon density of states is equal to zero and so the emission of light sources embedded in these crystals should be inhibited in these spectral regions (Vats et al., 2002). Since the time the effect is predicted, many experiments have been devoted to studies of spontaneous emission of molecules embedded in photonic crystals (Gaponenko et al., 1999; Gorelik, 2007). Typical structures of photonic crystals and calculations of corresponding photonic band structures are presented in a book by Prof. Joannopoulos (Joannopoulos et al., 2008). Besides the emission inhibition effect, a number of new optical phenomena in 3D photonic crystals, interesting from the applied point of view, are under intensive study now. The main research directions are the following: Effects of light localisation (John, 1987; Kaliteevskii et al., 2005; Vignolini et al., 2008). Radiation of photonic crystals filled with organic (rhodamine 6G, 1,8-naphthoylene1’,2’-benzimidazole, stilbene) and inorganic (ZnO, ZnS, rare-earth ions Eu3+, Tb3+, Er3+) luminophores near by the edges of photonic band-gap (Gaponenko et al., 1999; Aliev et al., 2002; Emel’chenko et al., 2005; Li et al., 2007). Radiation of CdTe, CdSe/ZnS quantum dots in photonic crystal volume (Gruzintsev et al., 2009; Ambrozevich et al., 2009). Quantum optics phenomena in nano-structured materials based on photonic crystals and nonlinear optical substances (Lin & Vuckovic, 2010). Effects of the radiation field amplification in photonic crystals (Lin & Vuckovic, 2010). Increase of solar cells efficiency with the use of photonic crystals (Florescu et al., 2007).