International Journal of Modern Physics B
ELECTROMAGNETICALLY INDUCED NEGATIVE REFRACTIVE INDEX IN DOPED SEMICONDUCTORS AT OPTICAL FREQUENCIES
Adil‐Gerai Kussow, Alkim Akyurtlu
Abstract
Based on methods of quantum optics, we discuss the possibility of achieving the negative index of refraction in a semiconductor with donor-like impurities. The quantum states of hydrogen-like donor atom and states of an electron in conduction band constitute a discrete-level atomic medium within the optical range. The coherent coupling of an electric dipole transition with a magnetic dipole transition leads to permeability and permittivity responses and, within some frequency band, ensures the negative refractive index. The magnetic moment between two quasi-atomic states separated by optical frequencies is induced by a low-frequency electromagnetic field. The implementation of this scheme is carried out in tin-doped indium oxide, and the calculations show feasibility of the effect within a broad bandwidth ∼2% with a high figure of merit greater than 10 in the optical regime.