Using the bosonization method of one-dimensional fermion system, we discussed the bosonized Hamiltonian of the half-filling Hubbard model, and investigated the ground state and phase transition properties with the gaussian effective potential method of sine-Gordon field.
In the framework of nonperturbative quantum field theory, the critical phenomena of one-dimensional extended Hubbard model (EHM) at half-filling are discussed from weak to intermediate interactions. After the EHM being mapped into two decoupled sine-Gordon models, the ground state phase diagram of the system is derived in an explicit way. It is confirmed that the coexisting phases appear in different interaction regimes which cannot be found by conventional theoretical methods. The diagram shows that there are seven different phase regions in the ground state, which seems not to be the same as previous discussions, especially the boundary between the phase separation and condensed phase regions. The phase transition properties of the model between various phase regions are studied in detail.
This chapter explains bosonization, a useful technique for describing the low-energy properties of one-dimensional systems. Bosonization is introduced by presenting a model on which this method is essentially exact. This allows for the derivation of precise formulas that can be used for other models as well. Bosons are mapped with fermions and the effect of the interactions is examined. A one-dimensional system with spin is also discussed, and renormalization equations for sine-Gordon Hamiltonians are presented and analyzed. Furthermore, the generic phase diagram of a one-dimensional chain is obtained.
We have investigated the ground-state phase diagram of the one-dimensional Hubbard model with alternating chemical potentials at half-filling by bosonization technique and the Gaussian wave functional method. We calculate variations of the charge density wave (CDW) and the spin density wave (SDW) gaps, ad well as their classical trajectory c,s with increasing on-site Coulomb repoulsion potential. For the fixed potential, it is found that the transition from the band insulator (BI) to the spontaneously dimerized insulator (SDI) is of the Ising type, at which charge gap vanishes, while the transition from SDI to the Mott insulator (MI) is of the KT type.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value Uc. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
A detailed quantitative study of the physical properties of the infinite-dimensional Hubbard model at half filling is presented. The method makes use of an exact mapping onto a single-impurity model supplemented by a self-consistency condition. This coupled problem is solved numerically. Results for thermodynamic quantities (specific heat, entropy, . . .), one-particle spectral properties, and magnetic properties (response to a uniform magnetic field) are presented and discussed. The nature of the Mott-Hubbard metal-insulator transition found in this model is investigated. A numerical solution of the mean-field equations inside the antiferromagnetic phase is also reported.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value Uc. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.