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Solid State Communications

Coherent dynamics of coupled electron and hole spins in semiconductors

D. Hägele, J. Hübner, Wolfgang W. Rühle, M. Oestreich

Published Sep 1, 2001• 17 citations
Publisher
DOI
10.1016/s0038-1098(01)00346-5

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Summary form only given. Over the last two years much effort has been devoted to experimentally explore spin electronics in semiconductors. These experiments also support the hope of implementing quantum information devices based on spins using the mature technology of semiconductors. A basic requirement for quantum information processing with spins is the control of the mutual interaction between single spins. We extend here the investigation of spin coherence to the case of exchange coupled electron hole spins within a single exciton. The sample under investigation is an intrinsic 3 nm GaAs/(AlGa)As multiple quantum well (MQW) with a large Stokes shift of 9 meV.
The coherent spin dynamics of resident carriers, electrons, and holes in semiconductor nanostructures is studied theoretically under the conditions of periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed. Accumulation of the spin polarization is manifested either as resonant spin amplification or as mode locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.
We demonstrate that the superposition of light polarization states is coherently transferred to electron spins in a semiconductor quantum well. By using time‐resolved Kerr rotation we observe the initial phase of Larmor precession of electron spins whose coherence is transferred from light. To break the electron‐hole spin entanglement, we utilized the big discrepancy between the transverse g‐factors of electrons and light holes. The result encourages us to make a quantum media converter between flying photon qubits and stationary electron spin qubits in semiconductors.