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Journal of the Optical Society of America B

Studies of high-speed optical switching in CdSe

C. R. Paton, Z. Xie, J. M. Hvam

Published Jul 1, 1990• 5 citations
Publisher

Abstract

We have observed high-speed optical switching based on the optical bistability of CdSe at low temperatures due both to induced absorption and to dispersion changes. Using a streak camera to record the response of a thin CdSe platelet to high-intensity dye-laser pulses at near-band-gap energies, we have studied these phenomena on a picosecond time scale and measured switching times of several hundred picoseconds. We attribute our observations to nonlinearities caused by exciton interactions in the semiconductor material. Finally, we discuss the part played in these phenomena by thermal and other dynamic effects.

DOI
10.1364/josab.7.001225

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We have observed high-speed optical switching based on the optical bistability of CdSe at low temperatures due both to induced absorption and to dispersion changes. Using a streak camera to record the response of a thin CdSe platelet to high-intensity dye-laser pulses at near-band-gap energies, we have studied these phenomena on a picosecond time scale and measured switching times of several hundred picoseconds. We attribute our observations to nonlinearities caused by exciton interactions in the semiconductor material. Finally, we discuss the part played in these phenomena by thermal and other dynamic effects.
The switching dynamics of thermally induced optical bistability due to increasing absorption is investigated in thin CdS platelets, at room temperature. Fast and slow components can be observed during the switching process, they depend on the holding point intensity and on the switching pulse energy. It is shown that the transverse relaxation of the temperature in the sample influences this dynamics. The spectral shift of the band to band absorption edge, at the origin of the bistable behavior, is observed in a three beam experiment.
A general discussion of the linear-optical properties of free and bound excitons in direct-gap semiconductors at low temperature is presented. This discussion then specializes to CdS. The nonlinear-optical response of CdS is introduced by first discussing the saturation behavior of bound excitons. A new type of cavityless optical bistability based on induced absorption near the free and bound excitons is described. Finally, fast all-optical switching (<1 nsec) at very low switching energies (<8 pJ) is demonstrated, using the giant nonlinearity associated with bound excitons.
The switching dynamics of photothermal-induced absorption optical bistability is studied in CdS. The bistable element being held near its switching threshold is switched by a pulse of an excimer laser, which can be regarded as δ shaped in time with respect to the thermal relaxation time of the sample. The dynamics of the switching process is influenced by the transverse relaxation of the temperature in the sample. Under appropriate conditions either a slowing down or a fast switching is observed.