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Optics Letters

Nonlinear Fabry-Perot resonator with a silicon photonic crystal waveguide

Kazuhiro Ikeda, Yeshaiahu Fainman

Published Nov 9, 2006• 16 citations
Publisher

Abstract

We derive an equation that describes the nonlinear operation of a Fabry-Perot resonator with a large group index waveguide. Specifically, a silicon photonic crystal microcavity with two-photon-excited free carrier nonlinearity and Kerr nonlinearity is assumed. The equation clearly explains the bistability of the device and the reduction of the required pump energy for a specific nonlinear phase shift at an appropriate phase detuning from the resonance. We present a simple procedure to predict the required optical pump energy for the modulation and the resulting modulation depth by use of the equation and the device parameters.

DOI
10.1364/ol.31.003486

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We derive an equation that describes the nonlinear operation of a Fabry-Perot resonator with a large group index waveguide. Specifically, a silicon photonic crystal microcavity with two-photon-excited free carrier nonlinearity and Kerr nonlinearity is assumed. The equation clearly explains the bistability of the device and the reduction of the required pump energy for a specific nonlinear phase shift at an appropriate phase detuning from the resonance. We present a simple procedure to predict the required optical pump energy for the modulation and the resulting modulation depth by use of the equation and the device parameters.
We present a theoretical model that describes accurately the nonlinear phenomenon of optical bistability in silicon-waveguide resonators but remains amenable to analytical results. Using this model, we derive a transcendental equation governing the intensity of a continuous wave transmitted through a Fabry-Perot resonator formed using a silicon-on-insulator waveguide. This equation reveals a dual role of free carriers in the formation of optical bistability in silicon. First, it shows that free-carrier absorption results in a saturation of the transmitted intensity. Second, the free-carrier dispersion and the thermo-optic effect may introduce phase shifts far exceeding those resulting from the Kerr effect alone, thus enabling one to achieve optical bistability in ultrashort resonators that are only a few micrometers long. Bistability can occur even when waveguide facets are not coated because natural reflectivity of the silicon- r interface can provide sufficient feedback. We find that it is possible to control the input-output characteristics of silicon-based resonators by changing the free-carrier lifetime using a reverse-biased p-n junction. We show theoretically that such a technique is suitable for realization of electronically assisted optical switching at a fixed input power and it may lead to silicon-based, nanometer-size, optical memories.
The reflectivity of a single-channel waveguide mode upon resonantly coupling to a Kerr-active nonlinear resonant cavity is calculated analytically, including the effects of two-photon absorption. The resonant reflectivity takes the form of a Fano resonance because the solution includes linear reflections from perturbations downstream of the localized cavity. Instead of using a Hamiltonian formulation of the scattering problem, an intuitive set of basis states is used to expand the Green's function of the electric field wave equation. All resulting overlap functions describing the linear coupling between guided and localized states, and the nonlinear renormalization of the material's refractive index, are in terms of well-defined physical quantities. Although derived in the context of photonic crystal-based waveguides and cavities, the treatment is valid for any low-loss waveguide-resonator geometry that satisfies specific weak coupling criteria. For a cavity consisting of Al0.18Ga0.82As, hosting a localized mode at 1.55 microm with a Q of 4000 and a mode volume of 0.055 microm(3), we predict the onset of bistable reflection at incident powers of approximately 40 mW. The downstream reflections lead to hysteresis loops in the reflectivity that are topologically distinct from conventional Lorentzian-derived loops characteristic of isolated Fabry-Perot cavities. We provide a stability argument that reveals the unstable branches of these unique hysteresis loops, and we illustrate some of the rich bistable behaviors that can be engineered with such downstream sources.
The finite-difference time-domain (FDTD) method is applied to investigate the characteristics of nonlinear Fabry-Perot (FP) resonators in optical waveguide geometries. Our treatment, which is the extension of Tran's method developed to analyse the characteristics of nonlinear photonic crystals, correctly reproduces analytical results on optical bistabilities of the FP resonator provided by Chen and Mills in 1987. It is found that the minimum power required for optical bistabilities is significantry decreased by adopting the optical waveguide geometry, compared with the case of Chen and Mills, i.e., a conventional nonlinear FP interferometer.
We analyze theoretically the nonlinear phenomenon of optical bistability inside a ring resonator formed with a silicon-waveguide nanowire and derive an exact parametric relation connecting the output intensity to the input intensity. Our input-output relation accounts for linear losses, the Kerr nonlinearity, two-photon absorption, free-carrier-induced absorption and dispersion, and thermo-optic effects within the resonator. Based on our study, we generalize the standard definition of effective length to allow for all possible losses within a silicon ring resonator. We also present a simplified version of the bistable phenomenon valid for resonators operating in a regime in which losses resulting from two-photon absorption are relatively small. Our analytical results provide clear insight into the physics behind optical bistability and may be useful for designing silicon-based optical memories.
We analyze the resonant linear and nonlinear transmission through a photonic crystal waveguide side-coupled to a Kerr-nonlinear photonic crystal resonator. First, we extend the standard coupled-mode theory analysis to photonic crystal structures and obtain explicit analytical expressions for the bistability thresholds and transmission coefficients which provide the basis for a detailed understanding of the possibilities associated with these structures. Next, we discuss limitations of standard coupled-mode theory and present an alternative analytical approach based on the effective discrete equations derived using a Green's function method. We find that the discrete nature of the photonic crystal waveguides allows a geometry-driven enhancement of nonlinear effects by shifting the resonator location relative to the waveguide, thus providing an additional control of resonant waveguide transmission and Fano resonances. We further demonstrate that this enhancement may result in the lowering of the bistability threshold and switching power of nonlinear devices by several orders of magnitude. Finally, we show that employing such enhancements is of paramount importance for the design of all-optical devices based on slow-light photonic crystal waveguides.