Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Letters

Superconducting Single-Charge Transistor in a Tunable Dissipative Environment

Frank K. Wilhelm, Gerd Schön, Gergely T. Zimányi

Published Sep 7, 2001• 19 citations
Publisher

Abstract

We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct the shape of the conductance peaks and their dependence on the dissipation and temperature. Unexpected features are found due to a crossover between two distinct regimes, one "environment assisted" the other "environment dominated." Several of the predictions have been confirmed by recent experiments. The model and results apply also to the dynamics of Josephson junction quantum bits on a conducting ground plane, thus explaining the influence of dissipation on the coherence.

DOI
10.1103/physrevlett.87.136802

Related papers

Superconducting single-charge transistor in a tunable dissipative environment

Frank K. Wilhelm, Gerd Schön, Gergely T. Zimányi

We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct the shape of the conductance peaks and their dependence on the dissipation and temperature. Unexpected features are found due to a cross-over between two distinct regimes, one `environment-assisted' the other `environment-dominated'. Several of the predictions have been confirmed by recent experiments. The model and results apply also to the dynamics of Josephson junction quantum bits on a conducting ground plane, thus explaining the influence of dissipation on the coherence.

arXiv:cond-mat/9910179•Oct 12, 1999•0 citations

Effect of Dissipation on the Dynamics of Superconducting Single Electron Transistors

Shuchao Meng

In this thesis, I will present the experimental results of the dynamics of \nsuperconducting single electron transistors (sSETs), under the influence of \ntunable dissipation. The sSET, consisting of two dc SQUIDs in series and \nthe third gate electrode, is deposited onto a GaAs/AlGaAs heterostructure \nwhich contains a two dimensional electron gas plane 100nm beneath the \nsubstrate surface. The Josephson coupling energy, charging energy and \ndissipation related Hamiltonian can all be tuned in situ, while keeping \nothers unchanged. We measured the switching current statistics and the \ntransport properties, as a function of the dissipation and gate charge at \ndifferent temperatures. \n \nIf the sSET is in the classical regime where phase is a good quantum \nvariable, we found that the switching current and corresponding Josephson \nenergy decrease as dissipation increases. Our observation agrees qualitatively \nwith the theoretical calculation of a single Josephson junction \nwith dominant Josephson energy, in a frequency dependent dissipative \nenvironment where energy barrier decreases as dissipation increases in \nthermally activated escape regime. This dissipation dependence result can \nbe understood as the consequence of a reduced quantum fluctuations in \nthe charge numbers. \n \nWhereas in the charging regime, the switching current shows a 1e \nperiodicity with respect to gate charge, indicating a pronounced charging \neffect. At a specific gate charge number, quantum fluctuations of the phase \nvariable are compressed as dissipation increases, resulting in an enhanced \nswitching current and Josephson energy. This result matches the theory of a sSET capacitively coupled to a dissipative environment qualitatively. \nThe temperature dependence of the switching current histogram indicates \nthe existence of both quantum and classical thermal phase diffusion. \nMoreover, quantum charge fluctuations are minimized at the degeneracy \npoint, causing a sharp dip on the width of the switching current histogram. \n \nFor a sSET with comparable Josephson energy and charging energy, \nquantum fluctuations of both phase and charge variables are significant. \nThe influence of dissipation on the dynamics of the device is distinct in the \nclassical and charging regimes. Dissipation compresses quantum phase \nfluctuations in the charging regime, whereas reduces the quantum charge \nfluctuations in the classical regime. The transition between these two \nregimes is found to be determined by the tunnel resistance of the SQUID. \nThe competition between Josephson and charging energies, however, is \nnot the intrinsic parameter of this transition. Our results imply that a \ndetailed theoretical calculation of a sSET with comparable Josephson \ncoupling energy and charging energy under the influence of dissipation is \nneeded.

•Aug 30, 2012•0 citations

Cooper Pair Cotunneling in Single Charge Transistors with Dissipative Electromagnetic Environment

S. V. Lotkhov, Sergey A. Bogoslovsky, Alexander B Zorin +1 more

We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R approximately R(Q)=h/4e(2) approximately 6.45 kOmega, which are explained in terms of Cooper pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.

arXiv:cond-mat/0305113•Physical Review Letters•Nov 3, 2003•30 citations

Josephson transistors interacting with dissipative environment

Juha Leppäkangas

The quantum-mechanical effects typical for single atoms or molecules can be reproduced in micrometer-scale electric devices. In these systems the essential component is a small Josephson junction (JJ) consisting of two superconductors separated by a thin insulator. The quantum phenomena can be controlled in real time by external signals and have a great potential for novel applications. However, their fragility on uncontrolled disturbance caused by typical nearby environments is a drawback for quantum information science, but a virtue for detector technology. Motivated by this we have theoretically studied transistor kind of devices based on single-charge tunneling through small JJs. A common factor of the research is the analysis of the interplay between the coherent Cooperpair (charge carriers in the superconducting state) tunneling and incoherent environmental processes. In the first work we calculate the current due to incoherent Cooper-pair tunneling through a voltage-biased small JJ in series with large JJs and compare the results with recent experiments. We are able to reproduce the main experimental features and interpret these as traces of energy levels and energy bands of the mesoscopic device. In the second work we analyze a similar circuit (asymmetric single-Cooper-pair transistor) but under the assumption that the Cooper-pair tunneling is mainly coherent. This predicts new resonant transport voltages in the circuit due to higher-order processes. However, no clear traces of most of them are seen in the experiments, and similar discrepancy is present also in the case of the symmetric circuit. We continue to study this problem by modeling the interplay between the coherent and incoherent processes more accurately using a density-matrix approach. By this we are able to demonstrate that in typical conditions most of these resonances are indeed washed out by strong decoherence caused by the environment. We also analyze the contribution of three typical weakly interacting dissipative environments: electromagnetic environment, spurious charge fluctuators in the nearby insulating materials, and quasiparticles. In the last work we model the dynamics of a currentbiased JJ perturbed by a smaller JJ using a similar density-matrix approach. We demonstrate that the small JJ can be used also as a detector of the energy-band dynamics in a current biased JJ. The method is also used for modeling the charge transport in the Bloch-oscillating transistor.

•Jan 1, 2009•0 citations

Radio-frequency-induced transport of Cooper pairs in superconducting single electron transistors in a dissipative environment

S. V. Lotkhov, Sergey A. Bogoslovsky, Alexander B Zorin +1 more

We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In samples with relatively large charging energy Ec>EJ, where EJ is the Josephson coupling energy, two transport mechanisms were found to be dominant, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island [in the conducting state of the transistor around the points Qg≡CgVg=e mod (2e), where Cg is the gate capacitance] or their cotunneling through the transistor (for Qg away of these points) was found to prevail in the net current. As the conducting state of our transistors had been found to be subject to quasiparticle poisoning, high-frequency gate cycling (at f∼1 MHz) was applied to study the sequential tunneling mechanism. A simple model based on the master equation was found to be in a good agreement with the experimental data.

arXiv:cond-mat/0312152•Journal of Applied Physics•May 17, 2004•7 citations

Suppression of Cooper-pair tunneling in superconducting charge boxes in tunable electromagnetic environments

Watson Kuo, Cen-Shawn Wu, Jia-Hong Shyu +1 more

The Cooper-pair tunneling in superconducting charge boxes in tunable electromagnetic environments is experimentally studied using a single-electron-transistor electrometer and via current-voltage characteristics measurement with small excitations. In the low-impedance regime, the environmental effect is quantified with an effective Josephson coupling energy, which is found to decrease as the environment impedance increases. In the high-impedance regime, the Cooper-pair tunneling is blockaded. For impedance above $250\phantom{\rule{0.3em}{0ex}}\mathrm{M}\ensuremath{\Omega}$, Coulomb oscillation of the zero-bias conductance suggests that Cooper-pair tunneling is completely suppressed and subgap quasiparticle tunneling becomes dominant.

Physical Review B•Jan 11, 2007•2 citations
We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct the shape of the conductance peaks and their dependence on the dissipation and temperature. Unexpected features are found due to a crossover between two distinct regimes, one "environment assisted" the other "environment dominated." Several of the predictions have been confirmed by recent experiments. The model and results apply also to the dynamics of Josephson junction quantum bits on a conducting ground plane, thus explaining the influence of dissipation on the coherence.
We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct the shape of the conductance peaks and their dependence on the dissipation and temperature. Unexpected features are found due to a cross-over between two distinct regimes, one `environment-assisted' the other `environment-dominated'. Several of the predictions have been confirmed by recent experiments. The model and results apply also to the dynamics of Josephson junction quantum bits on a conducting ground plane, thus explaining the influence of dissipation on the coherence.
In this thesis, I will present the experimental results of the dynamics of \nsuperconducting single electron transistors (sSETs), under the influence of \ntunable dissipation. The sSET, consisting of two dc SQUIDs in series and \nthe third gate electrode, is deposited onto a GaAs/AlGaAs heterostructure \nwhich contains a two dimensional electron gas plane 100nm beneath the \nsubstrate surface. The Josephson coupling energy, charging energy and \ndissipation related Hamiltonian can all be tuned in situ, while keeping \nothers unchanged. We measured the switching current statistics and the \ntransport properties, as a function of the dissipation and gate charge at \ndifferent temperatures. \n \nIf the sSET is in the classical regime where phase is a good quantum \nvariable, we found that the switching current and corresponding Josephson \nenergy decrease as dissipation increases. Our observation agrees qualitatively \nwith the theoretical calculation of a single Josephson junction \nwith dominant Josephson energy, in a frequency dependent dissipative \nenvironment where energy barrier decreases as dissipation increases in \nthermally activated escape regime. This dissipation dependence result can \nbe understood as the consequence of a reduced quantum fluctuations in \nthe charge numbers. \n \nWhereas in the charging regime, the switching current shows a 1e \nperiodicity with respect to gate charge, indicating a pronounced charging \neffect. At a specific gate charge number, quantum fluctuations of the phase \nvariable are compressed as dissipation increases, resulting in an enhanced \nswitching current and Josephson energy. This result matches the theory of a sSET capacitively coupled to a dissipative environment qualitatively. \nThe temperature dependence of the switching current histogram indicates \nthe existence of both quantum and classical thermal phase diffusion. \nMoreover, quantum charge fluctuations are minimized at the degeneracy \npoint, causing a sharp dip on the width of the switching current histogram. \n \nFor a sSET with comparable Josephson energy and charging energy, \nquantum fluctuations of both phase and charge variables are significant. \nThe influence of dissipation on the dynamics of the device is distinct in the \nclassical and charging regimes. Dissipation compresses quantum phase \nfluctuations in the charging regime, whereas reduces the quantum charge \nfluctuations in the classical regime. The transition between these two \nregimes is found to be determined by the tunnel resistance of the SQUID. \nThe competition between Josephson and charging energies, however, is \nnot the intrinsic parameter of this transition. Our results imply that a \ndetailed theoretical calculation of a sSET with comparable Josephson \ncoupling energy and charging energy under the influence of dissipation is \nneeded.
We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R approximately R(Q)=h/4e(2) approximately 6.45 kOmega, which are explained in terms of Cooper pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
The quantum-mechanical effects typical for single atoms or molecules can be reproduced in micrometer-scale electric devices. In these systems the essential component is a small Josephson junction (JJ) consisting of two superconductors separated by a thin insulator. The quantum phenomena can be controlled in real time by external signals and have a great potential for novel applications. However, their fragility on uncontrolled disturbance caused by typical nearby environments is a drawback for quantum information science, but a virtue for detector technology. Motivated by this we have theoretically studied transistor kind of devices based on single-charge tunneling through small JJs. A common factor of the research is the analysis of the interplay between the coherent Cooperpair (charge carriers in the superconducting state) tunneling and incoherent environmental processes. In the first work we calculate the current due to incoherent Cooper-pair tunneling through a voltage-biased small JJ in series with large JJs and compare the results with recent experiments. We are able to reproduce the main experimental features and interpret these as traces of energy levels and energy bands of the mesoscopic device. In the second work we analyze a similar circuit (asymmetric single-Cooper-pair transistor) but under the assumption that the Cooper-pair tunneling is mainly coherent. This predicts new resonant transport voltages in the circuit due to higher-order processes. However, no clear traces of most of them are seen in the experiments, and similar discrepancy is present also in the case of the symmetric circuit. We continue to study this problem by modeling the interplay between the coherent and incoherent processes more accurately using a density-matrix approach. By this we are able to demonstrate that in typical conditions most of these resonances are indeed washed out by strong decoherence caused by the environment. We also analyze the contribution of three typical weakly interacting dissipative environments: electromagnetic environment, spurious charge fluctuators in the nearby insulating materials, and quasiparticles. In the last work we model the dynamics of a currentbiased JJ perturbed by a smaller JJ using a similar density-matrix approach. We demonstrate that the small JJ can be used also as a detector of the energy-band dynamics in a current biased JJ. The method is also used for modeling the charge transport in the Bloch-oscillating transistor.
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In samples with relatively large charging energy Ec>EJ, where EJ is the Josephson coupling energy, two transport mechanisms were found to be dominant, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island [in the conducting state of the transistor around the points Qg≡CgVg=e mod (2e), where Cg is the gate capacitance] or their cotunneling through the transistor (for Qg away of these points) was found to prevail in the net current. As the conducting state of our transistors had been found to be subject to quasiparticle poisoning, high-frequency gate cycling (at f∼1 MHz) was applied to study the sequential tunneling mechanism. A simple model based on the master equation was found to be in a good agreement with the experimental data.
The Cooper-pair tunneling in superconducting charge boxes in tunable electromagnetic environments is experimentally studied using a single-electron-transistor electrometer and via current-voltage characteristics measurement with small excitations. In the low-impedance regime, the environmental effect is quantified with an effective Josephson coupling energy, which is found to decrease as the environment impedance increases. In the high-impedance regime, the Cooper-pair tunneling is blockaded. For impedance above $250\phantom{\rule{0.3em}{0ex}}\mathrm{M}\ensuremath{\Omega}$, Coulomb oscillation of the zero-bias conductance suggests that Cooper-pair tunneling is completely suppressed and subgap quasiparticle tunneling becomes dominant.