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physica status solidi (b)

Nonlinear Excitation of Pure and Doped Rare Gas Crystals

T. Keßler, R. Markus, Hartwig Nahme, N. Schwentner

Published Feb 1, 1987• 12 citations
Publisher

Abstract

Abstract The power dependence up to the destruction limit and the coefficient of two photon absorption in Xe and Kr crystals are derived from transmission and luminescence experiments. A temperature dependent reduction of the quantum efficiency for luminescence at high power densities due to exciton—exciton annihilation is observed.
DOI
10.1002/pssb.2221390227

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To understand the optical properties of atoms in solid state matrices, the absorption, excitation, and emission spectra of rubidium doped thin-films of argon, krypton, and xenon were investigated in detail. A two-dimensional spectral analysis extends earlier reports on the excitation and emission properties of rubidium in rare-gas hosts. We found that the doped crystals of krypton and xenon exhibit a simple absorption-emission relation, whereas rubidium in argon showed more complicated spectral structures. Our sample preparation employed in the present work yielded different results for the Ar crystal, but our peak positions were consistent with the prediction based on the linear extrapolation of Xe and Kr data. We also observed a bleaching behavior in rubidium excitation spectra, which suggests a population transfer from one to another spectral feature due to hole-burning. The observed optical response implies that rubidium in rare-gas thin-films is detectable with extremely high sensitivity, possibly down to a single atom level, in low concentration samples.
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This paper proposes for consideration an additional mechanism for influencing the exciton absorption spectra and observing temperature redistribution peculiarities of the crystal absorptive power. They are caused by nonlinear phonon-exciton interactions, which are due to anharmonic effects in the exciton-phonon system. The arising of the borderline frequency, which possesses the smallest region of optical bistability realization, is caused by a break in the direction of the absorption curve. At low temperatures the basic role is played by the exciton-exciton interaction, and at high temperatures nonlinear exciton-exciton-phonon processes play the most important role the value of the borderline frequency is defined by the size and sign of the nonlinear exciton-exciton-phonon function as well as by the crystal temperature and the exciton density, which is created by the external powerful laser wave.
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