We continue our previous program1 where we introduced a set of quantum-based design rules directed at quantum engineers who design single-photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high-resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio-fluorescence microscopy and 3D vision systems. They have also been particularly successful for intra-chip optical communications implemented entirely in CMOS technology. More importantly for our purposes, a very low dark count allows SPADs to detect rare photon events with a high dynamic range and high signal-to-noise ratio. Our CMOS SPADs support multi-channel detection of photon arrivals with picosecond accuracy, several million times per second, due to a very short detection cycle. The tiny chip area means they are suitable for highly miniaturized quantum imaging devices and that is how we employ them in this paper. Our quantum path integral analysis of the Young-Afshar-Wheeler interferometer showed that Bohr's complementarity principle was not violated due the previously overlooked effect of photon bifurcation within the lens--a phenomenon consistent with our quantum design rules--which accounts for the loss of which-path information in the presence of interference. In this paper, we report on our progress toward the construction of quantitative design rules as well as some proposed tests for quantum imaging devices using entangled photon sources with our SPAD imager.
We continue our previous program1 where we introduced a set of quantum-based design rules directed at quantum engineers who design single-photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high-resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio-fluorescence microscopy and 3D vision systems. They have also been particularly successful for intra-chip optical communications implemented entirely in CMOS technology. More importantly for our purposes, a very low dark count allows SPADs to detect rare photon events with a high dynamic range and high signal-to-noise ratio. Our CMOS SPADs support multi-channel detection of photon arrivals with picosecond accuracy, several million times per second, due to a very short detection cycle. The tiny chip area means they are suitable for highly miniaturized quantum imaging devices and that is how we employ them in this paper. Our quantum path integral analysis of the Young-Afshar-Wheeler interferometer showed that Bohr's complementarity principle was not violated due the previously overlooked effect of photon bifurcation within the lens--a phenomenon consistent with our quantum design rules--which accounts for the loss of which-path information in the presence of interference. In this paper, we report on our progress toward the construction of quantitative design rules as well as some proposed tests for quantum imaging devices using entangled photon sources with our SPAD imager.
CMOS, detector arrays, interferometer, phase twinning, quantum imaging, SPAD (single photon avalanche diode) We continue our previous program where we introduced a set of quantum-based design rules directed at quantum engineers who design single-photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high-resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio-fluorescence microscopy and 3D vision systems. They have also been
Quantum imaging uses entangled photons to overcome the limits of a classical-light apparatus in terms of image quality, beating the standard shot-noise limit, and exceeding the Abbe diffraction limit for resolution. In today experiments, the spatial properties of entangled photons are recorded by means of complex and slow setups that include either the motorized scanning of single-pixel single-photon detectors, such as Photo-Multiplier Tubes (PMT) or Silicon Photo- Multipliers (SiPM), or the use of low frame rate intensified CCD cameras. CMOS arrays of Single Photon Avalanche Diodes (SPAD) represent a relatively recent technology that may lead to simpler setups and faster acquisition. They are spatially- and time-resolved single-photon detectors, i.e. they can provide the position within the array and the time of arrival of every detected photon with <100 ps resolution. SUPERTWIN is a European H2020 project aiming at developing the technological building blocks (emitter, detector and system) for a new, all solid-state quantum microscope system exploiting entangled photons to overcome the Rayleigh limit, targeting a resolution of 40nm. This work provides the measurement results of the 2nd order cross-correlation function relative to a flux of entangled photon pairs acquired with a fully digital 8×16 pixel SPAD array in CMOS technology. The limitations for application in quantum optics of the employed architecture and of other solutions in the literature will be analyzed, with emphasis on crosstalk. Then, the specifications for a dedicated detector will be given, paving the way for future implementations of 100kpixel Quantum Image Sensors.
The ability to generate and handle quantum correlations in twin-beam states is the foundation to overcome the imaging limitations imposed by classical light [1], relying on efficient detectors able to select temporal correlations among photons with maximized signal-to-noise ratio. Indeed, quantum information is contained in the interaction with the sample of just two photons, thus losing even one of them or mixing them up with background can completely compromise the experiment. To this end, assessing and evaluating the expected probability of measurement errors is of utmost importance to optimize the detector design. A typical experimental setup of a quantum imaging system based on Spontaneous Parametric Down Conversion (SPDC), the most effective way of producing temporally and spatially correlated entangled photons [2], involves a pump laser hitting a non-linear birefringent crystal producing a down-converted signal, some passive optical components to generate polarization-entangled photons and a pixelated photon detector that eventually reveals the position of coincident entangled photons. The overall detection efficiency of the measurement setup (i.e. heralding efficiency ηH) gathers all its possible losses and non-idealities of the mentioned setup components, namely the crystal conversion efficiency, the optical losses, the detector Photon Detection Efficiency (PDE) and fill-factor. In this study, we consider a detection based on a Single Photon Avalanche Diode (SPAD) array, able to detect coincidences on-chip and with event-driven architecture, which provides fast readout, low power consumption and optimized data throughput. However, related to every on-chip coincidence detection and event-driven based architecture, some operations require a certain amount of time to be performed that, combined with the generation of undesired single photons (both due to limited heralding efficiency and SPAD Dark Count Rate, DCR), yield to three measurement errors, here described with their related probabilities. Firstly, due to the finite duration of the coincidence window ∆tCOINC, there exist a probability Pfalseof wrongly detecting as coincident photons two single photons, and can be expressed as:\begin{equation*}{P_{false}} = \frac{{\left[ {2{\mu _{SOURCE{\text{ }}}}{\eta _H}\left( {1 - {\eta _H}} \right) + {\text{DCR}}} \right]\left( {1 - {e^{ - \left[ {2{\mu _{SOURCE}}{\eta _H}\left( {1 - {\eta _H}} \right) + {\text{DCR}}} \right]\Delta {t_{COINC}}}}} \right)}}{{{\mu _{SOURCE}}\eta _H^2 + \left[ {2{\mu _{SOURCE}}{\eta _H}\left( {1 - {\eta _H}} \right) + DCR} \right]\left( {1 - {e^{ - \left[ {2{\mu _{SOURCE}}{\eta _H}\left( {1 - {\eta _H}} \right) + {\text{DCR}}} \right]\Delta {t_{COINC}}}}} \right)}}\tag{1}\end{equation*}where µSOURCEis the number of photon pairs generated by an ideal non-linear crystal. Secondly, in the time needed for the array to "freeze" the pixels state after a coincidence event (∆tFREEZE) so that they can be readout, there is the probability Pspuriousof detecting a third spurious event after a coincidence has been detected, which is expressed as:\begin{equation*}{P_{spurious}} = 1 - {e^{ - \left[ {2{\mu _{SOURCE\eta }}_H\left( {1 - {\eta _H}} \right) + DCR} \right]\Delta {t_{FREEZE}}}}\tag{2}\end{equation*}
Single-Photon Avalanche Diodes (SPADs) are solid-state photo-detectors capable of detecting single photons by exploiting the avalanche effect that occurs in the breakdown of a p-n junction biased above breakdown voltage. By this effect, a SPAD translates an incoming photon to a macroscopic current pulse. These devices are currently used for building medical devices characterized by a very high time resolution. An appealing application of SPAD is to use them as a basic block for building the entropy source of true random number generators. In this paper we focus on such application, and we explore the design challenges behind the realization of a quantum random number generator based on a massively parallel array of SPADs. The matrix under investigation comprises 512×128 independent cells that convert photons onto a raw bit-stream, which, as ensured by the properties of quantum physics, is characterized by a very high level of randomness. The sequences are read out in a 128-bit parallel bus, concatenated, and pipelined onto a de-biasing filter. Subsequently, we fabricated the proposed chip using a standard CMOS process. Our results, achieved on the manufactured device and coupling two matrices, show that our architecture can reach up to 5 Gbit/s while consuming 25pJ/bit, thus demonstrating scalability and performance for any random number generators based on SPADs.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
Quantum resources can provide supersensitive performance in optical imaging. Detecting entangled photon pairs from spontaneous parametric down conversion (SPDC) with single-photon avalanche diode (SPAD) image sensor arrays (ISAs) enables practical wide-field quantum-enhanced imaging. However, matching the SPDC wavelength to the peak detection efficiency range of complementary metal-oxide-semiconductor (CMOS) compatible mass-producible SPAD-ISAs has remained technologically elusive, resulting in low imaging speeds to date. Here, we show that a recently developed visible-wavelength entangled photon source enables high-speed quantum imaging. By operating at high detection efficiency of a SPAD-ISA, we increase acquisition speed by more than an order of magnitude compared to previous similar quantum imaging demonstrations. Besides being fast, the quantum-enhanced phase imager operating at short wavelengths retrieves nanometer scale height differences, tested by imaging evaporated silica and protein microarray spots on glass samples, with sensitivity improved by a factor of 1.351 ± 0.004 over equivalent ideal classical imaging. This work represents an important stepping stone towards scalable real-world quantum imaging advantage, and may find use in biomedical and industrial applications as well as fundamental research.