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IEEE Transactions on Applied Superconductivity

Large Signal Amplitude and Bias Range of Cascade Switch Superconducting Nanowire Single Photon Detectors

Mikkel Ejrnaes, A. Casaburi, Orlando Quaranta, S. Marchetti, Alessandro Gaggero, F. Mattioli, Roberto Leoni, S. Pagano, Roberto Cristiano

Published Jun 1, 2009• 9 citations
Publisher

Abstract

Cascade switch superconducting nanowire single photon detectors has been fabricated of ultrathin NbN films deposited by DC-magnetron sputtering at room temperature on MgO substrates. Detectors using 4 to 24 nanowires in parallel, having an area coverage of 5times mum2and a filling factor of 40%, have been investigated. Signal amplitudes increase with the number of parallel nanowires and reaches 12.3 mV with a signal noise of 20 muV. The range of bias currents where the detectors emit signal pulses also increase with the number of parallel nanowires and exceeds the nanowire critical current.

DOI
10.1109/tasc.2009.2019034

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Cascade switch superconducting nanowire single photon detectors has been fabricated of ultrathin NbN films deposited by DC-magnetron sputtering at room temperature on MgO substrates. Detectors using 4 to 24 nanowires in parallel, having an area coverage of 5times mum2and a filling factor of 40%, have been investigated. Signal amplitudes increase with the number of parallel nanowires and reaches 12.3 mV with a signal noise of 20 muV. The range of bias currents where the detectors emit signal pulses also increase with the number of parallel nanowires and exceeds the nanowire critical current.
Ultrathin NbN nanowires is the material of choice for superconducting single photon detectors (SSPD) due to the good efficiency, dark count rate and timing jitter at 1550 nm wavelength obtained. These performance parameters are achieved using nanowires a few nanometers thick and 100 nm wide patterned into a meander shape in order to achieve area coverage. The meander shape effectively makes the SSPD of a single very long nanowire in turn giving it a significant inductance which limits the maximum count rate of the detector. Recently, we demonstrated how one can exploit a cascade switch to the normal state of nanowires connected in parallel to significantly reduce the SSPD inductance and increase the signal amplitude. Here we present how one can configure SSPDs that uses multiple cascade switches to the normal state. We show how this principle can be used to expand the SSPD coverage area with a very limited increase in detector inductance with area. Finally we discuss our first results obtained with SSPD based on the multiple cascade switch principle, showing correct operation, increased operational bias range and increased signal pulse amplitudes.
Ultrathin NbN nanowires is the material of choice for superconducting single photon detectors (SSPD) due to the good efficiency, dark count rate and timing jitter at 1550 nm wavelength obtained. These performance parameters are achieved using nanowires a few nanometers thick and 100 nm wide patterned into a meander shape in order to achieve area coverage. The meander shape effectively makes the SSPD of a single very long nanowire in turn giving it a significant inductance which limits the maximum count rate of the detector. Recently, we demonstrated how one can exploit a cascade switch to the normal state of nanowires connected in parallel to significantly reduce the SSPD inductance and increase the signal amplitude. Here we present how one can configure SSPDs that uses multiple cascade switches to the normal state. We show how this principle can be used to expand the SSPD coverage area with a very limited increase in detector inductance with area. Finally we discuss our first results obtained with SSPD based on the multiple cascade switch principle, showing correct operation.
High sensitivity ultrafast nanowire superconducting single photon detectors (SSPD) in the near infrared wavelength range have been fabricated with ultrathin (3.5nm) NbN films grown on R-plane sapphire substrates by dc reactive magnetron sputtering in Ar+N2mixture. These results show for the first time that high performance NbN SSPDs can be realized on different substrates and at lower deposition temperature than previously reported, and opens the way to integration with advanced solid state optical structures. SSPDs have been fabricated by a two mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO.
We report on superconducting single-photon detectors (SSPDs) based on NbN nanowires and their application to single-photon measurements at telecom wavelengths. The detectors are realized by patterning ultra thin (3 - 5 nm-thick) NbN films into meanders of 100 nm-wide wires. The films are deposited by DC magnetron sputtering at relatively low temperatures (≈500 °C) on MgO and GaAs substrates (as compared to the approach of high-temperature deposition on sapphire). In 5 nm-thick films, TCsas high as 10 K and 11 K have been obtained on GaAs and MgO, respectively (Fig. 1). SSPDs have been fabricated by a two-mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO. The detectors are 5 × 5 μm2in size, and composed of a 100 μm long, 100 nm wide nanowire folded in a meander pattern with filling factor of 40%. Typical room temperature resistivity ρ is of 190 μΩ·cm, and I-V curves at 4.2 K show a critical current density JCof about 6 MA·cm-2, which are state of the art values. Quantum efficiency (QE) was measured illuminating the detectors mounted in a liquid He bath through an optical fiber. Quantum efficiencies >10% are measured at 4.2 K, comparable to best results on sapphire substrates. In particular, SSPDs show a large increase in sensitivity, temporal resolution and maximum counting frequencies as compared to InGaAs avalanche photodiodes.
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150 nm to 3 nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400 degrees C SSPDs were fabricated on high quality NbN films of different thickness (7 to 3 nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300 nm.