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IEEE Journal of Quantum Electronics

Semiclassical model of semiconductor laser noise and amplitude noise squeezing. I. Description and application to Fabry-Perot laser

J.-L. Vey, Philippe B. Gallion

Published Jan 1, 1997• 20 citations
Publisher

Abstract

A semiclassical model of semiconductor laser noise, based on the Green's function method, is used to derive analytical formulas for the amplitude and frequency noise spectra taking into account incoming vacuum fluctuations and noise due to internal loss. This formalism also takes into account phenomena such as gain suppression as well as spatial hole burning (SHB). The amplitude noise squeezing is studied for Fabry-Perot structures pointing out the influence of the laser structural parameters. A complete agreement with already existing quantum mechanical models is found. However, extension of the model to SHB induces limitations in the squeezing performances, which are very important for more complex structures as will be pointed out in detail, in Part II.

DOI
10.1109/3.641325

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For pt.I see ibid., vol.33, no.11, p.2097-2104 (1997). We present noise studies of distributed feedback (DFB) laser structures, where spatial hole burning (SHB) plays a key role performed using the model described in part I of this paper with particular emphasis on the influence of SHB, on the coupling coefficient /spl kappa/L, and on the laser facet reflectivities. These structures exhibit high amplitude noise and the possible noise reduction is strongly reduced compared to Fabry-Perot structures. Distributed Bragg reflector (DBR) lasers are better candidates even if their performances are also strictly determined by SHB and the loss in the Bragg reflector. Finally, limitations due to gain suppression are demonstrated for such complex lasers structures. We conclude on the optimum laser structure for amplitude squeezed states generation.

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In the recent paper 1 semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τ p ( τ p −1=τp0−1+2Cφ, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)2 / (l +α2) and (1 + Cα)2 / (1 + C2) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C 1 can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.

Quantum Optoelectronics•Jan 1, 1993•1 citation
A semiclassical model of semiconductor laser noise, based on the Green's function method, is used to derive analytical formulas for the amplitude and frequency noise spectra taking into account incoming vacuum fluctuations and noise due to internal loss. This formalism also takes into account phenomena such as gain suppression as well as spatial hole burning (SHB). The amplitude noise squeezing is studied for Fabry-Perot structures pointing out the influence of the laser structural parameters. A complete agreement with already existing quantum mechanical models is found. However, extension of the model to SHB induces limitations in the squeezing performances, which are very important for more complex structures as will be pointed out in detail, in Part II.
For pt.I see ibid., vol.33, no.11, p.2097-2104 (1997). We present noise studies of distributed feedback (DFB) laser structures, where spatial hole burning (SHB) plays a key role performed using the model described in part I of this paper with particular emphasis on the influence of SHB, on the coupling coefficient /spl kappa/L, and on the laser facet reflectivities. These structures exhibit high amplitude noise and the possible noise reduction is strongly reduced compared to Fabry-Perot structures. Distributed Bragg reflector (DBR) lasers are better candidates even if their performances are also strictly determined by SHB and the loss in the Bragg reflector. Finally, limitations due to gain suppression are demonstrated for such complex lasers structures. We conclude on the optimum laser structure for amplitude squeezed states generation.
Spectral-hole burning (SHB) profoundly affects the modulation and noise properties of laser oscillators and amplifiers at high optical power. The present semiclassical theory of SHB shows that the optical gain should be considered a function of the carrier number and photon rate (rather than photon number) plus a fluctuation at the shot-noise level (for full population inversion). Constant-voltage-driven laser diodes generate amplitude-squeezed light, a result not predicted by previous theories that treat gain compression in a formal way. Amplitude and phase noise of oscillators and amplifiers are considered.
A new time-domain model using the quantum formalism of the positive-P distribution is used to investigate squeezing in laser diodes, taking into account longitudinal hole burning and distributed noise sources, under steady-state and large-signal modulation. Simulations indicate that the laser structure determines the lowest achievable intensity noise. With losses present or power escaping from the rear facet, this minimum noise may be much higher than expected from the device quantum efficiency. Squeezing appears more difficult in DFB lasers than in Fabry-Perot lasers in our simulations. Mode-partition noise is removed by low-loss passive DBR sections, and such laser diodes are promising sources with low-intensity noise. Intensity noise in the large-signal dynamic regime is also simulated, showing that intensity-squeezed light output is possible.>
In the recent paper 1 semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τ p ( τ p −1=τp0−1+2Cφ, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)2 / (l +α2) and (1 + Cα)2 / (1 + C2) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C 1 can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.