This study elucidates the theory of phonon-induced decoherence of a double dot charge qubit that is embedded inside a suspended semiconductor slab. The influences of the lattice temperature, width of the slab, and positions of the dots on the decoherence are analyzed. Numerical results indicate that the decoherence in the slab system is weaker than that in a bulk environment. In particular, the decoherence is markedly suppressed by the inhibition of the electron-phonon coupling. Such a system with low decoherence may be useful for manipulating the qubits.
We investigate the dynamics of a double quantum dot charge qubit which is coupled to piezoelectric acoustic phonons, appropriate for GaAs heterostructures. At low temperatures, the phonon bath induces the non-Markovian dynamical behavior of the oscillations between the two charge states of the double quantum dot. Upon applying the numerically exact quasiadiabatic propagator path-integral scheme, the reduced density matrix of the charge qubit is calculated, thereby avoiding the Born-Markov approximation. This allows a systematic study of the dependence of the
Q factor on the lattice temperature, on the size of the quantum dots, as well as on the interdot coupling. We calculate the
Q factor for a recently realized experimental setup and find that it is two orders of magnitudes larger than the measured value, indicating that the decoherence due to phonons is a subordinate mechanism.