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IEEE Transactions on Instrumentation and Measurement

All-niobium process for Josephson series array circuits

Se Il Park, Kyu‐Tae Kim, Rae Duk Lee

Published Apr 1, 1995• 7 citations
Publisher

Abstract

We have developed a new fabrication process for integrated Nb/Al/sub 2/O/sub 3//Nb Josephson series arrays using the selective niobium anodization process (SNAP), the image reversal technique (IRT) and lift-off. To avoid chaotic behavior, the critical current of the array was decreased by post-fabrication annealing or the in situ multilayer oxidation process. In the frequency range 70-100 GHz, the array containing 2520 junctions produced stable quantized voltage steps up to 2 V with step widths of 40-100 /spl mu/A and stability times of more than 4 h.>

DOI
10.1109/19.377821

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IEEE Transactions on Applied Superconductivity•Jun 1, 1997•6 citations
We have developed a new fabrication process for integrated Nb/Al/sub 2/O/sub 3//Nb Josephson series arrays using the selective niobium anodization process (SNAP), the image reversal technique (IRT) and lift-off. To avoid chaotic behavior, the critical current of the array was decreased by post-fabrication annealing or the in situ multilayer oxidation process. In the frequency range 70-100 GHz, the array containing 2520 junctions produced stable quantized voltage steps up to 2 V with step widths of 40-100 /spl mu/A and stability times of more than 4 h.>
Niobium/aluminum-oxide/niobium Josephson tunnel junctions have been fabricated using electron beam evaporation to form all-metal films in a high vacuum system. A quality factor, V m (the product of the maximum dc Josephson current and the subgap resistance defined at 2 mV) between 36–37 mV, has been obtained for the best junctions of a 6 nm-thick Al layer by cooling down the surface of the base electrode for 100 minutes under a high background pressure, before the deposition of aluminum, after the formation of the base niobium electrode. An array of 80 series-connected junctions has also been fabricated using the selective niobium anodization process and the planarization process. The current-voltage characteristics of the array showed a standard deviation of the maximum dc Josephson current of 3.3%.
Stacked Josephson junction arrays located at the rf current antinodes of a superconducting microstripline resonator were investigated. The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with tunneling area of 60 /spl mu/m/spl times/300 /spl mu/m and critical current density up to 7 A/cm/sup 2/ were used. We compared the average voltages of the rf induced maximal current steps in arrays with up to three junctions per stack. Quantized current steps up to 300 mV were observed under microwave irradiation at frequency of 19.20 GHz in circuits with 384 three-junction stacks. The dynamics of stacked tunnel junctions in the presence of rf-currents will be discussed with respect to application as voltage standards.