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IEEE Transactions on Applied Superconductivity

Characterization of MoSi superconducting single-photon detectors in magnetic field

Alexander A. Korneev, Yu. P. Korneeva, M. Yu. Mikhaı̆lov, Alexander V. Semenov, Yuriy P. Pershyn, Alexander V. Divochiy, Yu. B. Vachtomin, Смирнов Константин Владимирович, Alexander Yu. Devizenko, A. G. Sivakov, Gregory N Gol'tsman, Denis Yu. Vodolazov

Published Jan 1, 2014• 11 citations
Publisher

Abstract

We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.

DOI
10.1109/tasc.2014.2376892

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cond-mat.supr-conCross-listedarXiv:2605.27179•May 27, 2026•0 citations
We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.
The photon count rate (PCR) of superconducting single-photon detectors made of ${\mathrm{Mo}}_{x}{\mathrm{Si}}_{1\text{\ensuremath{-}}x}$ films shaped as a 2-$\ensuremath{\mu}\mathrm{m}$-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross{I}_{\mathrm{cross}}Icross​ is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow ${\mathrm{Mo}}_{x}{\mathrm{Si}}_{1\text{\ensuremath{-}}x}$ meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field.
We have studied the magnetic-field dependence of both dark-count rates and photon-count rates in a superconducting nanowire single-photon detector made of TaN in external magnetic fields $|{\ensuremath{\mu}}_{0}H|<10$ mT perpendicular to the plane of the underlying meander structure and at T=4T=4T=4 K. The dark-count rates show a characteristic field dependence, which is asymmetric with respect to magnetic-field direction. The field and the current dependence of the dark counts can be quantitatively well explained if one assumes that the critical current is reduced to $\ensuremath{\approx}$5050%50 at the ${180}^{\ensuremath{\circ}}$ meander turns when compared to a straight strip, and the observed asymmetry can be modeled assuming that the turnarounds are not all strictly equal. Surprisingly, the photon-count rates do not show any significant field dependence, which seems to be at odds with existing detection models invoking vortex crossings.
We have studied the influence of an externally applied magnetic field on the photon and dark count rates of meander-type niobium nitride superconducting nanowire single-photon detectors. Measurements have been performed at a temperature of 4.2 K, and magnetic fields up to 250 mT have been applied perpendicularly to the meander plane. While photon count rates are field independent at weak applied fields, they show a strong dependence at fields starting from approximately \ifmmode\pm\else\textpm\fi{}25 mT. This behavior, as well as the magnetic field dependence of the dark count rates, is in good agreement with the recent theoretical model of vortex-assisted photon detection and spontaneous vortex crossing in narrow superconducting lines. However, the local reduction of the superconducting free energy due to photon absorption, which is the fitting parameter in the model, increases much slower with the photon energy than the model predicts. Furthermore, changes in the free-energy during photon counts and dark counts depend differently on the current that flows through the meander. This indicates that photon counts and dark counts occur in different parts of the meander.
We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin and narrow superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with sufficient energy to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high-bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon of insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single-photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.
Superconducting nanowire single-photon detectors (SNSPDs) are receiving the interest of the scientific and industrial communities due to their unparallel high performances in the infrared. However, even though the fabrication process permits the achievement of about 98% efficiency and less than 1 cps dark-count rate, the physical mechanism inducing the detection remains unclear. It is clear however that normal core vortices play a crucial role. In this work we investigate the role of vortices in two-dimensional (2D) molybdenum silicide SNSPDs of different widths covered with an Al\mathrm{Al}Al layer through the analysis of the switching current distributions from the superconducting to resistive regime, in a wide interval of temperatures from 4.5 K down to 10 mK. This analysis provides the energy scales of different mechanisms that are responsible for fluctuations and dark counts in SNSPDs. We consider two models based on vortices, the unbinding of vortex-antivortex pairs (VAPs) and vortices hopping over the edge barrier (VH) and we underline the differences among different devices made by different materials. We also estimate the energy scales of similar $\mathrm{Nb}\text{\ensuremath{-}}\mathrm{Ti}\text{\ensuremath{-}}\mathrm{N}$ and NbN\mathrm{Nb}\mathrm{N}NbN devices and compare the results. The lower activation energies obtained for MoSi/Al\mathrm{Mo}\mathrm{Si}/\mathrm{Al}MoSi/Al devices, explain the peculiarity of this material to work at longer wavelengths with a higher quantum detection efficiency.
We report on the impact of the stoichiometry of superconducting MoSi thin films on the performance of superconducting nanowire single-photon detectors (SNSPDs). Specifically, we investigate the relation between the film parameters critical temperature Tc , sheet resistance Rs and superconductor thickness d and observe a universal scaling behavior. To benchmark the performance of SNSPDs fabricated from films having different stoichiometry, we measure the bias dependent count rate curves, while the detector is illuminated with wavelengths between 780 nm and 1550 nm. The detector performance as a function photon energy for different nanowire widths reveals a linear relation between the detection current and the photon energy. Furthermore, we determine the interfacial thermal boundary conductance βββ between the superconducting thin film and the substrate, by measuring the return current of the SNSPD and find an increase of βββ with increasing Mo concentration. The highest sensitivity amongst all compared devices is achieved for Mo0.53_{0.53}0.53​Si0.47_{0.47}0.47​, with low Tc (4.1 K) and high Rs (397ΩΩΩ/sq) at a film thickness of 5.4 nm.