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Physical Review Letters

Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot

S. J. Boyle, A. J. Ramsay, A. M. Fox, Maurice S. Skolnick, Albert P. Heberle, M. Hopkinson

Published May 20, 2009• 50 citations
Publisher

Abstract

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.

DOI
10.1103/physrevlett.102.207401

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We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. A resonant regime with picosecond laser excitation is realized by embedding the quantum dots in a one-dimensional waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide but with different dynamics with respect to usual cavity quantum electrodynamics. The resonant control of the quantum dot fundamental transition opens new possibilities in quantum state manipulation and quantum optics experiments in condensed-matter physics.
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It is demonstrated how the exciton and the biexciton state of a quantum dot can be prepared with high fidelity on a picosecond time scale by driving the dot with a strong laser pulse that is tuned above the exciton resonance for exciton preparation and in resonance with the exciton transition for biexciton preparation. The proposed protocols make use of the phonon-induced relaxation towards photon dressed states in optically driven quantum dots and combine the simplicity of traditional Rabi oscillation schemes with the robustness of adiabatic rapid passage schemes. Our protocols allow for an on-demand, fast, and almost perfect state preparation even at strong carrier-phonon interaction where other schemes fail. In fact, the performance of the presented protocols is shown to be better the stronger the carrier-phonon interaction is.
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