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Superconductor Science and Technology

DC SQUID RF amplifier with external mm-wave pumping and its testing by SIS junction noise

Michael A. Tarasov, Victor Y. Belitsky, G.V. Prokopenko, Lyudmila V. Filippenko, V. P. Koshelets

Published Nov 1, 1991• 1 citation
Publisher

Abstract

The power gain and the noise temperature of a DC SQUID RF amplifier at a signal frequency 400 MHz were measured in the presence of external microwave radiation at 2 cm, 8 mm and 4 mm wavelengths. The authors used a four-loop planar DC SQUID with an integrated input coil and very low values of inductances and stray capacitances. In the noise measurements they used an SIS junction as a precise source of input noise at high DC bias voltage V b >V 2 Delta . In such a configuration the studied system is the same as an SIS mm-wave mixer with a SQUID IF amplifier.

DOI
10.1088/0953-2048/4/11/024

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IEEE Transactions on Applied Superconductivity•Jun 1, 1999•12 citations
The power gain and the noise temperature of a DC SQUID RF amplifier at a signal frequency 400 MHz were measured in the presence of external microwave radiation at 2 cm, 8 mm and 4 mm wavelengths. The authors used a four-loop planar DC SQUID with an integrated input coil and very low values of inductances and stray capacitances. In the noise measurements they used an SIS junction as a precise source of input noise at high DC bias voltage V b >V 2 Delta . In such a configuration the studied system is the same as an SIS mm-wave mixer with a SQUID IF amplifier.
The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>
Integrated radio-frequency amplifiers comprising a 4-loop dc SQUID, seriesly connected input coil turns, a resonant capacitor parallel to the input coil, series capacitors at the input and output ports and bias resistors have been designed, fabricated and experimentally studied. A multiloop dc SQUID with parallel loops and seriesly connected single-turn input coils placed inside each loop and integration with the input resonant matching circuit elements and with elements of dc bias circuit allows one to increase signal frequency and reduce the influence of external noise. The amplifiers with three different capacitors have resonant frequencies 560, 656, 758 MHz and bandwidth about 50 MHz. The noise temperature of such amplifiers below 1.5 K has been measured using cold attenuator and room-temperature noise sources. The layout comprising three pairs of such amplifiers placed on the same 15/spl times/24 mm substrate was designed to increase the bandwidth over the bandwidth of the individual amplifiers.>
The optimal input impedance and noise of a DC SQUID RF amplifier at frequencies of the order of 1 GHz with a resonant input matching circuit have been studied analytically, numerically, and experimentally. A model for noise temperature and power gain has been developed for the practical resonant input tank circuit. A new effect of the output noise increasing or decreasing with changing the sign of voltage-to-flux transfer coefficient has been observed experimentally and explained analytically. The different values of noise temperature for the opposite dV/d/spl Phi/ values have been interpreted using a model with partially correlated current and voltage noise sources. The equivalent layout for optimal input matching of a SQUID amplifier comprising series and parallel resonant circuits has been presented. Using such a matching circuit and SIS junction as a signal source the SQUID amplifier noise temperature about 1 K has been measured at 1.1 GHz.
A low-noise RF amplifier based on a dc SQUID (SQA) has been tested in the frequency range 3.0-4.6 GHz in the open-loop configuration. The following parameters have been measured for the single-stage balanced type SQA at 4.0 GHz: gain (12/spl plusmn/1) dB, 3 dB bandwidth of 500 MHz and noise temperature (1.0/spl plusmn/0.25) K. For the nonbalanced type SQA at 4.0 GHz gain was (15/spl plusmn/1) dB, 3 dB bandwidth 200 MHz and noise temperature (0.5/spl plusmn/0.25) K. The improved performance is obtained due to the increased characteristic voltage (/spl ap/420 /spl mu/V) of the small-area (down to 0.7-0.9 /spl mu/m/sup 2/) high-quality Nb-AlO/sub x/-Nb SIS junctions. The saturation power (normalized to 1 GHz) referred to the input at 1 dB gain compression is estimated as /spl ap/55 K*GHz at a bias voltage of 60 /spl mu/V. The reasons for saturation of the SQA are discussed.
The dc SQUID based RF amplifier (SQA) looks very attractive as an IF amplifier for integration with a SIS mixer and a flux-flow oscillator (FFO) in a fully superconducting submillimeter wave receiver suitable for space applications. Important advantages of the SQA are its low noise, extremely low power consumption, and complete compatibility with the fabrication process currently used for SIS mixers. Single stage amplifiers with a novel signal coupling circuit have been developed and tested in the frequency range 3.6-4.1 GHz. The 1 /spl mu/m/sup 2/ area Nb-AlO/sub x/-Nb junctions shunted by Ti resistors are grouped in a double washer dc SQUID. Two samples with slightly different designs showed the following gain, noise temperature and 3 dB bandwidth: 10.0/spl plusmn/1 dB, 5.0/spl plusmn/1.5 K, 3.86-3.90 GHz, and 6.8/spl plusmn/1 dB, 22/spl plusmn/7 K, 3.89-4.05 GHz, respectively.
A 6 mm/spl times/6 mm chip comprising two identical DC SQUID based amplifiers (SQAs) has been designed, fabricated and tested as a two-stage RF amplifier in a frequency range 3.5-4.0 GHz. Each SQA consists of a double washer type DC SQUID with novel integrated input resonant circuit. The reflection coefficient of both input and output of the SQA has been measured in the two stage configuration. To avoid SQA saturation at the wide band noise tests a tunable 40 MHz bandpass YIG-filter has been used. The following parameters of the two-stage SQA have been measured at the 3.65 GHz: gain of (17.5/spl plusmn/1) dB, 3 dB bandwidth of about 250 MHz, and noise temperature (4.0/spl plusmn/0.5)K what corresponds to intrinsic flux noise S/spl phi//sup 1/2//spl ap/0.6 /spl mu//spl Phi//sub 0/Hz/sup -1/2/ and energy sensitivity /spl epsiv//sub i//spl ap/75 /spl planck/ (7.8/spl middot/10/sup -33/ J/Hz). If the measured RF mismatch between the input/output of SQA and source signal/post-amplifier is taken into account a gain of (20.5/spl plusmn/1.5) dB and noise temperature as low as (2.5/spl plusmn/1.0) K (intrinsic flux noise S/spl phi//sup 1/2//spl ap/0.4 /spl mu//spl Phi//sub 0/Hz/sup -1/2/, energy sensitivity /spl epsiv//sub i//spl ap/47 /spl planck/) can be estimated.