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Journal of Applied Physics

Thin film Nb3Ge dc-SQUID with high operating temperature

Horst Rogalla, Bernd R. David, J. Rühl

Published May 1, 1984• 18 citations
Publisher

Abstract

Small area planar Nb3Ge dc-SQUIDs with wide operating temperature range were obtained using thin (40 nm) Nb3Ge films with high transition temperature Tc and small critical current per unit length. The SQUIDS were fabricated using electron beam lithography and reactive ion etching. SQUID operation was observed in the temperature range from 10 to 18.4 K with a best modulation depth of 11%.

DOI
10.1063/1.333361

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Small area planar Nb3Ge dc-SQUIDs with wide operating temperature range were obtained using thin (40 nm) Nb3Ge films with high transition temperature Tc and small critical current per unit length. The SQUIDS were fabricated using electron beam lithography and reactive ion etching. SQUID operation was observed in the temperature range from 10 to 18.4 K with a best modulation depth of 11%.
DC SQUIDs with outer loop size ∼10 μmx 10 μm have been fabricated with nanobridge Josephson junctions in thin Niobium films (25, 100 and 200 nm) using either electron beam or focused ion beam techniques. Such SQUIDs are ideally suited to incorporate into the centre strip of a superconducting coplanar waveguide. The current-voltage characteristics and magnetic field modulation of the SQUIDs are compared for the two methods. The temperature dependence of the critical current is quite linear for the e-beam devices whilst the focused ion beam devices fit an exponential. Here we also investigate trimming methods to reduce the critical currents of the nanojunctions fabricated in the thicker films, in order to improve the SQUID parameters at lower temperatures.
A thin-film dc superconducting quantum interference device (SQUID) consisting of quasiparticle-injected superconducting weak links was fabricated and successfully operated. This SQUID was made on a silicon substrate and it consists of a ∼100-nm-thick lead alloy with two injector junctions. The characteristics of this dc SQUID are controllable by varying the injecting rate of quasiparticles; therefore, it can be operated at arbitrary temperatures below the transition temperature of the superconducting material.
Nano-meter(nm)-bridges with high-Tcmaterials hold great technological interest because of their smaller capacitance and expected higher IoRn-product. They are promising especially for applications such as high speed logic and high frequency radiation detectors. Also they can operate over a wide temperature range and are stable against thermal cycles as are incorporating the refractory high-Tcsuperconductors. One of the essential ingredient for high quality bridges is to have NbN films. Ultra-thin NbN films have been prepared by rf reactive-sputtering. NbN films deposited epitaxially on rf sputtered MgO films have high superconducting transition temperature Tc. Tcvalue of the film with thickness of about 5nm was about 14K, and is much higher than those deposited on Al2O3films and Si substrates. Two types of nm-bridges were reproducibly fabricated with NbN films deposited epitaxially on MgO films. The obtained IoRn-products were in a range of 0.5 to 3.6mV. The microwave-induced voltage steps were observed up to the voltage comparable to IoRn- product. The dc and ac quantum effects of the dc SQUIDs were observed in quite wide range of temperature, 4.2 to 11.4K.
We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17-μm-wide weak links over a ∼1-μm-thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.
Thin-film SQUID’s fabricated from the high Tc refractory material NbN have been studied at 9.4 GHz. Devices with granular weak links display a Josephson critical current dependence over a wide range of temperatures below Tc. We have observed open loop signal-to-noise ratios as high as 20 000 corresponding to a minimum detectable energy of 1×10−30 J in a 1 Hz bandwidth over a temperature range of several °K. In two samples, the response time was found to be limited by the intrinsic gap response time, τg∼h//2Δ (T). These devices are rugged, stable, cycle well, and have good SQUID properties at both 9.4 GHz and 20 MHz.