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Soviet Journal of Quantum Electronics

Amplification of an electromagnetic wave reflected from population-inverted semiconductor films

I F Vakhnenko, Yu G Novokhat'ko, V M Filippov

Published Sep 30, 1975• 0 citations
Publisher

Abstract

A theoretical analysis is made of the reflection of light from population-inverted semiconductor films. It is shown that, under certain conditions, light (electromagnetic wave) may be amplified as a result of such reflection.
DOI
10.1070/qe1975v005n09abeh011958

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The existing linear theory of the reflection of light waves from an amplifying medium is debated. The exiting data are often contradictory, a reflection coefficient of amplifying medium of greater than unity is discussed, an upper bound of 5.82 is imposed on this quantity, significant corrections of prelaser concepts regarding the reflection and refraction of light in such media are proposed, etc. This stimulates reconsideration of the existing results. Evidently, the corresponding analysis must be based on the data obtained with a commonly accepted and, preferably, simplest approach. In our opinion, such an approach represents an analytical continuation of the known prelaser achievements (the Airy formulas for the reflection and transmission of light in a transparent medium proposed in 1833) to the domain of the amplifying media. The results presented can improve the basis of a linear theory for the interaction of light with amplifying media.
In this paper, the slow and fast light (SFL) effects of the semiconductor optical amplifier (SOA) having certain facet reflections are theoretically investigated. The theoretical model is used to account for the SFL phenomenon causing the coherent population oscillation. The influence of the current modulation frequency, the value of the current, the linewidth enhancement factor, facet reflectivity as well as the relative phase of the modulated current on the phase delay in the SOA are studied. It is demonstrated that the SFL effect could be controlled by the modulation frequency, the value and relative phase of the current. Finally, it is shown that the magnitude of the SFL delay could be tuned by a change in the linewidth enhancement factor as well as the facet reflectivity of the SOA.
An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron—hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by α L ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron—hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q -switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.