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Nature Communications

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

Mohsen Ghali, Keita Ohtani, Y. Ohno, Hideo Ohno

Published Feb 7, 2012• 93 citations
Publisher

Abstract

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. As quantum information and communication experiments grow in sophistication, the need for efficient sources of entangled photons escalates. Using exciton and biexciton emission in GaAs island quantum dots, Ghaliet al. demonstrate the electric field-induced generation of entangled photons with high fidelity.

DOI
10.1038/ncomms1657

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Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton–exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72±0.05. As quantum information and communication experiments grow in sophistication, the need for efficient sources of entangled photons escalates. Using exciton and biexciton emission in GaAs island quantum dots, Ghaliet al. demonstrate the electric field-induced generation of entangled photons with high fidelity.
We report on the observation of nearly maximally entangled photon pairs from semiconductor quantum dots, without resorting to postselection techniques. We use GaAs quantum dots integrated on a patterned piezoelectric actuator capable of suppressing the exciton fine structure splitting. By using a resonant two-photon excitation, we coherently drive the biexciton state and demonstrate experimentally that our device generates polarization-entangled photons with a fidelity of 0.978(5) and a concurrence of 0.97(1) taking into account the nonidealities stemming from the experimental setup. By combining fine-structure-dependent fidelity measurements and a theoretical model, we identify an exciton spin-scattering process as a possible residual decoherence mechanism. We suggest that this imperfection may be overcome using a modest Purcell enhancement so as to achieve fidelities >0.99, thus making quantum dots evenly matched with the best probabilistic entangled photon sources.
Entangled photon sources are crucial for quantum optics, quantum sensing, and quantum communication. Semiconductor quantum dots generate on-demand entangled photon pairs via the biexciton-exciton cascade. However, the pair of photons are emitted isotropically in all directions, thus limiting the collection efficiency to a fraction of a percent. Moreover, strain and structural asymmetry in quantum dots lift the degeneracy of the intermediate exciton states in the cascade, thus degrading the measured entanglement fidelity. Here, we propose an approach for generating a pair of entangled photons from a semiconductor quantum dot by application of a quadrupole electrostatic potential. We show that the quadrupole electric field corrects for the spatial asymmetry of the excitonic wave function for any quantum dot dipole orientation and fully erases the fine-structure splitting without compromising the spatial overlap between electrons and holes. Our approach is compatible with nanophotonic structures such as microcavities and nanowires, thus paving the way towards a deterministic source of entangled photons with high fidelity and collection efficiency.
Quantum dots are considered an attractive system for applications in quantum communication and quantum logic, confirmed by experimental demonstrations of quantum dot based single photon emission devices. Another key quantum optics resource is the on-demand generation of entangled photon pairs, for which the radiative decay of the biexciton state in a quantum dot has been proposed. The realization of such a device has been prevented due to polarization splitting of the exciton fine structure, caused by anisotropies of various structural parameters of the dot. We present the results of recent experiments that manage the splitting in quantum dots, in order to allow entangled photon emission. We demonstrate that dots with splitting within the homogeneous linewidth can be realized by carefully controlling the thickness of the dot layer. Furthermore, we show that the splitting can be reduced to zero by the application of an in-plane magnetic field. Polarization dependent correlation measurements on these dots will be presented that show characteristic features of entanglement, such as polarization correlation for all linear detection bases, and circular polarization anti-correlation. Our results indicate that for the first time, we have observed triggered entangled photon pair emission from a quantum dot.
Semiconductor Quantum dots are potentially an attractive source of non-classical light. They can confine bound electron-hole pairs, excitons, in all three spatial dimensions giving them discrete optical emission energies, much like the electronic states in atomic systems. The semiconductor nature of the system allows quantum dots to be integrated into complicated device structures including optical cavities [1] and electrical injection [2]. The radiative exciton emission from a semiconductor quantum dot can provide the simplest form of quantum light, a single photon source [2]. The finite re-excitation time following the radiative decay of an exciton in a quantum dot prevents the dot from emitting more than one photon if excited with a short optical or electronic pulse. In a similar fashion excitation of the biexciton state, consisting of two electrons and holes, in the quantum dot results in the emission of a pair of photons at the energy of the biexciton and exciton transitions. The biexciton state was, in fact, proposed as a possible source of polarisation-entangled photons in 2000 by Benson et al. [3] as it consists of two polarisation-correlated decay paths which could potentially be indistinguishable. The condition of indistinguishability is fundamental to the generation of entangled photons and is, in general, not true of the two decay paths from the biexciton state in a quantum dot; physical anisotropy causes the intermediate exciton states to hybridise and separate in energy providing ‘which-path’ information about the route taken through the biexciton decay. We demonstrate how the splitting between the intermediate exciton states in a single InAs quantum dot can be controlled by growth [4], rapid thermal annealing [5] and the application of an external magnetic field [6]. Each of these three techniques can be used to make the intermediate exciton states degenerate allowing the biexciton decay to produce singe pairs of entangled photons triggered by short laser pulses [7,8]. Entangled photon pair sources are essential for applications such as entanglement based quantum key distribution, and optical quantum computing. For these applications it is important that no more than one entangled photon pair is generated in a cycle, a requirement met by our quantum dot source which is not possible with traditional methods for generating entangled pairs of photons. Entanglement also enables quantum interferometry and metrology, the basis of image resolution beyond that possible with equivalent classical light. Biphoton interferometry using entangled emission from the biexciton decay reveals fringes with half the period of classical light [9], and less that that of the laser. In addition, interferometry suggests that this type of entangled light source is not limited by decoherence, we fine the biphoton is surprising robust against dephasing, in stark contrast to the devastating effect of decoherence upon single photons emitted by similar structures.
The radiative biexciton–exciton decay in a semiconductor quantum dot (QD) has the potential of being a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. Here, we present measurements on improved QD structures, providing both significantly reduced inhomogeneous emission linewidths and near-zero fine structure splittings. A high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography. We were able to verify the conditions of entangled or classically correlated photon pairs in full consistence with observed fine structure properties. Furthermore, we demonstrate reliable polarization-entanglement for elevated temperatures up to 30 K. The fidelity of the maximally entangled state decreases only a little from 72% at 4 K to 68% at 30 K. This is especially encouraging for future implementations in practical devices.
We report on polarisation correlation from the cascaded recombination of biexcitons in a quantum dot emitting at a telecommunication wavelength. The fine structure splitting of the exciton state in this InAs/GaAs quantum dot is of the order of 100 μeV and polarisation correlation is expected. Strong polarisation correlation between the biexciton and exciton emission lines is observed under both continuous wave (CW) and pulsed laser excitation so telecom wavelength quantum dots with lower energy splittings could be suitable for entangled photon pair generation. Measurements were performed using nanowire superconducting single photon detectors (SSPDs). SSPDs offer low time-jitter and improve the resolution of features in the correlation spectra, including the asymmetric dip and peak resulting from the cascaded emission with the peak extending more than an order of magnitude above the Poissonian level.